Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy von Averichkin, P. A., Donskov, A. A., Dukhnovsky, M. P., Knyazev, S. N., Kozlova, Yu. P., Yugova, T. G., Belogorokhov, I. A.

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Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150cm2/Vs at 300K for ion-implanted... von Ratnikova, A.K., Dukhnovsky, M.P., Fedorov, Yu.Yu, Zemlyakov, V.E., Muchnikov, A.B., Vikharev, A.L., Gorbachev, A.M., Radishev, D.B., Altukhov, A.A., Mitenkin, A.V.

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Combined single-crystalline and polycrystalline CVD diamond substrates for diamond electronics von Vikharev, A. L., Gorbachev, A. M., Dukhnovsky, M. P., Muchnikov, A. B., Ratnikova, A. K., Fedorov, Yu. Yu

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Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm 2/V s at 300 K for ion-impla... von Ratnikova, A.K., Dukhnovsky, M.P., Fedorov, Yu.Yu, Zemlyakov, V.E., Muchnikov, A.B., Vikharev, A.L., Gorbachev, A.M., Radishev, D.B., Altukhov, A.A., Mitenkin, A.V.

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Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond von Altukhov, A. A., Vikharev, A. L., Gorbachev, A. M., Dukhnovsky, M. P., Zemlyakov, V. E., Ziablyuk, K. N., Mitenkin, A. V., Muchnikov, A. B., Radishev, D. B., Ratnikova, A. K., Fedorov, Yu. Yu

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Doping profiles of AlGaAs/InGaAs/GaAs pHEMT-structures von Zmanovsky, P.A., Il’yushina, N.D., Abdulov, M.M., Smirnova, A.K., Drozdov, M.N., Vedeneev, A.A., Dukhnovsky, M.P.

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