Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics von Park, Ju Yong, Choe, Duk-Hyun, Lee, Dong Hyun, Yu, Geun Taek, Yang, Kun, Kim, Se Hyun, Park, Geun Hyeong, Nam, Seung-Geol, Lee, Hyun Jae, Jo, Sanghyun, Kuh, Bong Jin, Ha, Daewon, Kim, Yongsung, Heo, Jinseong, Park, Min Hyuk

Volltext

Phase patterning for ohmic homojunction contact in MoTe2 von Cho, Suyeon, Kim, Sera, Kim, Jung Ho, Zhao, Jiong, Seok, Jinbong, Keum, Dong Hoon, Baik, Jaeyoon, Choe, Duk-Hyun, Chang, K. J., Suenaga, Kazu, Kim, Sung Wng, Lee, Young Hee, Yang, Heejun

Volltext

In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories von Jan, Atif, Rembert, Thomas, Taper, Sunil, Symonowicz, Joanna, Strkalj, Nives, Moon, Taehwan, Lee, Yun Seong, Bae, Hagyoul, Lee, Hyun Jae, Choe, Duk‐Hyun, Heo, Jinseong, MacManus‐Driscoll, Judith, Monserrat, Bartomeu, Di Martino, Giuliana

Volltext

Carrier multiplication in van der Waals layered transition metal dichalcogenides von Kim, Ji-Hee, Bergren, Matthew R., Park, Jin Cheol, Adhikari, Subash, Lorke, Michael, Frauenheim, Thomas, Choe, Duk-Hyun, Kim, Beom, Choi, Hyunyong, Gregorkiewicz, Tom, Lee, Young Hee

Volltext

Laminated Ferroelectric FET With Large Memory Window and High Reliability von Lee, Hyun Jae, Nam, Seunggeol, Lee, Yunseong, Kim, Kihong, Choe, Duk-Hyun, Yoo, Sijung, Park, Yoonsang, Jo, Sanghyun, Kim, Donghoon, Heo, Jinseong

Volltext

Long-Range Lattice Engineering of MoTe2 by a 2D Electride von Kim, Sera, Song, Seunghyun, Park, Jongho, Yu, Ho Sung, Cho, Suyeon, Kim, Dohyun, Baik, Jaeyoon, Choe, Duk-Hyun, Chang, K. J, Lee, Young Hee, Kim, Sung Wng, Yang, Heejun

Volltext

An analytical interpretation of the memory window in ferroelectric field-effect transistors von Yoo, Sijung, Choe, Duk-Hyun, Lee, Hyun Jae, Jo, Sanghyun, Lee, Yun Sung, Park, Yoonsang, Kim, Ki-Hong, Kim, Donghoon, Nam, Seung-Geol

Volltext

Interfacial Layer Selection Methodology for Customized Ferroelectric Memories von Lee, Hyun Jae, Moon, Taehwan, Nam, Seunggeol, Bae, Hagyoul, Choe, Duk-Hyun, Jo, Sanghyun, Lee, Yunseong, Park, Yoonsang, Kim, Kihong, Heo, Jinseong

Volltext

Understanding topological phase transition in monolayer transition metal dichalcogenides von Choe, Duk-Hyun, Sung, Ha-Jun, Chang, K. J.

Volltext

Bandgap Widening of Phase Quilted, 2D MoS2 by Oxidative Intercalation von Song, Sung Ho, Kim, Bo Hyun, Choe, Duk-Hyun, Kim, Jin, Kim, Dae Chul, Lee, Dong Ju, Kim, Jung Mo, Chang, Kee Joo, Jeon, Seokwoo

Volltext

Machine Learning Augmented Discovery of Chalcogenide Double Perovskites for Photovoltaics von L. Agiorgousis, Michael, Sun, Yi‐Yang, Choe, Duk‐Hyun, West, Damien, Zhang, Shengbai

Volltext

Universal Conductance Fluctuation in Two-Dimensional Topological Insulators von Choe, Duk-Hyun, Chang, K. J.

Volltext

Quantum oscillation in carrier transport in two-dimensional junctions von Zhang, Junfeng, Xie, Weiyu, Agiorgousis, Michael L, Choe, Duk-Hyun, Meunier, Vincent, Xu, Xiaohong, Zhao, Jijun, Zhang, Shengbai

Volltext

Band Alignment and the Built-in Potential of Solids von Choe, Duk-Hyun, West, Damien, Zhang, Shengbai

Volltext

Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering von Jan, Atif, Fraser, Stephanie A., Moon, Taehwan, Lee, Yun Seong, Bae, Hagyoul, Lee, Hyun Jae, Choe, Duk‐Hyun, Becker, Maximilian T., MacManus‐Driscoll, Judith L., Heo, Jinseong, Di Martino, Giuliana

Volltext

Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride von Cho, Suyeon, Kang, Se Hwang, Yu, Ho Sung, Kim, Hyo Won, Ko, Wonhee, Hwang, Sung Woo, Han, Woo Hyun, Choe, Duk-Hyun, Jung, Young Hwa, Chang, Kee Joo, Lee, Young Hee, Yang, Heejun, Kim, Sung Wng

Volltext

Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls von Choe, Duk-Hyun, Kim, Sunghyun, Moon, Taehwan, Jo, Sanghyun, Bae, Hagyoul, Nam, Seung-Geol, Lee, Yun Seong, Heo, Jinseong

Volltext

Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing von Moon, Taehwan, Lee, Hyun Jae, Nam, Seunggeol, Bae, Hagyoul, Choe, Duk-Hyun, Jo, Sanghyun, Lee, Yun Seong, Park, Yoonsang, Yang, J Joshua, Heo, Jinseong

Volltext

Traditional Semiconductors in the Two-Dimensional Limit von Lucking, Michael C, Xie, Weiyu, Choe, Duk-Hyun, West, Damien, Lu, Toh-Ming, Zhang, S B

Volltext

Unveiling the Origin of Robust Ferroelectricity in Sub‑2 nm Hafnium Zirconium Oxide Films von Lee, Hyangsook, Choe, Duk-Hyun, Jo, Sanghyun, Kim, Jung-Hwa, Lee, Hyun Hwi, Shin, Hyun-Joon, Park, Yeehyun, Kang, Seunghun, Cho, Yeonchoo, Park, Seontae, Moon, Taehwan, Eom, Deokjoon, Leem, Mirine, Kim, Yunseok, Heo, Jinseong, Lee, Eunha, Kim, Hyoungsub

Volltext