50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages von Dong Xu, Kong, W.M.T., Xiaoping Yang, Mohnkern, L., Seekell, P., Mt. Pleasant, L., Duh, K.G., Smith, P.M., Pane-Chane Chao

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A cryogenic K-band ground terminal for NASA'S direct-data-distribution space experiment von Romanofsky, R.R., Warner, J.D., Alterovitz, S.A., Covey, L., Smith, A., Newman, P., Duh, K.G.

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Physical mechanisms limiting the manufacturing uniformity of millimeter-wave power InP HEMT's von Krupenin, S., Blanchard, R.R., Somerville, M.H., Del Alamo, J.A., Duh, K.G., Chao, P.C.

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On-state breakdown in power HEMTs: measurements and modeling von Somerville, M.H., Blanchard, R., del Alamo, J.A., Duh, K.G., Chao, P.C.

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Temperature dependence of breakdown voltage in InAlAs/InGaAs HEMTs: theory and experiments von Putnam, C.S., Somerville, M.H., del Alamo, J.A., Chao, P.C., Duh, K.G.

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Progress in GaAs metamorphic HEMT technology for microwave applications von Smith, P.M., Dugas, D., Chu, K., Nichols, K., Duh, K.G., Fisher, J., Mt Pleasant, L., Xu, D., Gunter, L., Vera, A., Lender, R., Meharry, D.

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Pheochromocytoma and Paraganglioma: An Endocrine Society Clinical Practice Guideline von Lenders, Jacques W. M, Duh, Quan-Yang, Eisenhofer, Graeme, Gimenez-Roqueplo, Anne-Paule, Grebe, Stefan K. G, Murad, Mohammad Hassan, Naruse, Mitsuhide, Pacak, Karel, Young, William F

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