Asymmetrically Recessed 50-nm Gate-Length Metamorphic High Electron-Mobility Transistor With Enhanced Gain Performance von Dong Xu, Kong, W.M.T., Xiaoping Yang, Smith, P.M., Dugas, D., Chao, P.C., Cueva, G., Mohnkern, L., Seekell, P., Pleasant, L.Mt, Schmanski, B., Duh, K.H.G., Karimy, H., Immorlica, A., Komiak, J.J.

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Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates von AKSUN, M. I, MORKOC, H, LESTER, L. F, DUH, K. H. G, SMITH, P. M, CHAO, P. C, LONGERBONE, M, ERICKSON, L. P

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0.1- \mu \text Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers von Dong Xu, Chu, K. K., Diaz, J. A., Ashman, M., Komiak, J. J., Pleasant, L. Mt, Creamer, C., Nichols, K., Duh, K. H. G., Smith, P. M., Chao, P. C., Dong, L., Ye, Peide D.

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50-nm Asymmetrically Recessed Metamorphic High-Electron Mobility Transistors With Reduced Source-Drain Spacing: Performance Enhancement and Tradeoffs von Dong Xu, Xiaoping Yang, Seekell, P., Mt. Pleasant, L. M., Mohnkern, Lee, Kanin Chu, Stedman, R. G., Vera, A., Isaak, R., Schlesinger, L. L., Carnevale, R. A., Duh, K. H. G., Smith, P. M., Chao, P. C.

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Gate-Length Scaling of Ultrashort Metamorphic High-Electron Mobility Transistors With Asymmetrically Recessed Gate Contacts for Millimeter- and Submillimeter-Wave Applications von Dong Xu, Xiaoping Yang, Kong, W M T, Seekell, P, Louie, K, Pleasant, L, Mohnkern, L, Dugas, D M, Kanin Chu, Karimy, H F, Duh, K H G, Smith, P M, Chao, P C

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DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs von Chao, P.-C., Shur, M.S., Tiberio, R.C., Duh, K.H.G., Smith, P.M., Ballingall, J.M., Ho, P., Jabra, A.

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W-band low-noise InAlAs/InGaAs lattice-matched HEMTs von Chao, P.C., Tessmer, A.J., Duh, K.-H.G., Ho, P., Kao, M.-Y., Smith, P.M., Ballingall, J.M., Liu, S.-M.J., Jabra, A.A.

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Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor von Henderson, T., Aksun, M.I., Peng, C.K., Morkoc, H., Chao, P.C., Smith, P.M., Duh, K.-H.G., Lester, L.F.

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Mechanical characteristics and corrosion behavior of (Ti,Al)N coatings on dental alloys von Liu, G.T., Duh, J.G., Chung, K.H., Wang, J.H.

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Effect of L12 ordering in antiferromagnetic Ir-Mn epitaxial layer on exchange bias of FePd films von Chang, Y C, Liu, S H, Su, S H, Chiu, K F, Hsieh, W C, Chen, S K, Lin, Y G, Sung, C K, Duh, J G

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Ultra-low noise characteristics of millimeter-wave high electron mobility transistors von Duh, K.-H.G., Liu, S.-M.J., Lester, L.F., Chao, P.C., Smith, P.M., Das, M.B., Lee, B.R., Ballingall, J.

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Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs von Kao, M.-Y., Smith, P.M., Ho, P., Chao, P.-C., Duh, K.H.G., Jabra, A.A., Ballingall, J.M.

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Effect of L 12 ordering in antiferromagnetic Ir-Mn epitaxial layer on exchange bias of FePd films von Chang, Y. C., Hsiao, S. N., Liu, S. H., Su, S. H., Chiu, K. F., Hsieh, W. C., Chen, S. K., Lin, Y. G., Lee, H. Y., Sung, C. K., Duh, J. G.

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32-GHz cryogenically cooled HEMT low-noise amplifiers von Duh, K.H.G., Kopp, W.F., Ho, P., Chao, P.-C., Ko, M.-Y., Smith, P.M., Ballingall, J.M., Bautista, J.J., Ortiz, G.G.

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Millimeter-wave low-noise high electron mobility transistors von Chao, P.C., Palmateer, S.C., Smith, P.M., Mishra, U.K., Duh, K.H.G., Hwang, J.C.M.

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0.1-μm gate-length pseudomorphic HEMT's von CHAO, P. C, TIBERIO, R. C, DUH, K.-H. G, SMITH, P. M, BALLINGALL, J. M, LESTER, L. F, LEE, B. R, JABRA, A, GIFFORD, G. G

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Scaling behaviors of 25-NM asymmetrically recessed metamorphic high electron-mobility transistors von Dong Xu, Kong, W.M.T., Xiaoping Yang, Seekell, P., Mohnkern, L., Pleasant, L.M., Karimy, H., Duh, K.H.G., Smith, P.M., Chao, P.C.

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Design of high-power, high-efficiency 60-GHz MMICs using an improved nonlinear PHEMT model von Tang, O.S.A., Duh, K.H.G., Liu, S.M.J., Smith, P.M., Kopp, W.F., Rogers, T.J., Pritchard, D.J.

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New Cytotoxic Sesquiterpenes from the Gorgonian Isis hippuris von Sheu, Jyh-Horng, Hung, Kuang-Chih, Wang, Guey-Horng, Duh, Chang-Yih

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Magnetic and crystallographic properties of the permanent magnet systems (R1-xScx)2Fe14B (R=Y, Nd, Dy, Er, Lu) von CHEN, S. K, DUH, J. G

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