Observation of Restored Topological Surface States in Magnetically Doped Topological Insulator von Kim, Jinsu, Shin, Eun-Ha, Sharma, Manoj K., Ihm, Kyuwook, Dugerjav, Otgonbayar, Hwang, Chanyong, Lee, Hwangho, Ko, Kyung-Tae, Park, Jae-Hoon, Kim, Miyoung, Kim, Hanchul, Jung, Myung-Hwa

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Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC(0001): graphene doping and substrate band bending von Kim, Hidong, Dugerjav, Otgonbayar, Arvisbaatar, Amarmunkh, Seo, Jae M

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Growth of a crystalline and ultrathin MgO film on Fe(001) von Dugerjav, Otgonbayar, Kim, Hidong, Seo, Jae M.

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Growth of Graphene on the Cu(110) Surface von Dugerjav, Otgonbayar, Duvjir, Ganbat, Tapaszto, Levente, Hwang, Chanyong

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Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-xGex intercalation von Kim, Hidong, Dugerjav, Otgonbayar, Lkhagvasuren, Altaibaatar, Seo, Jae M.

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Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-Ge intercalation von Kim, Hidong, Dugerjav, Otgonbayar, Lkhagvasuren, Altaibaatar, Seo, Jae M.

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Origin of ambipolar graphene doping induced by the ordered Ge film intercalated on SiC(0001) von Kim, Hidong, Dugerjav, Otgonbayar, Lkhagvasuren, Altaibaatar, Seo, Jae M.

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Effect of High-Energy Vibrating Ball Milling in the Reduction of the Crystallite Size of TiO 2 Particles von Batdemberel, Ganbat, Otgonbayar, Dugerjav, Munkhsaikhan, Gonchigsuren

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Synthesis and Characterization of Nanosized Ti3O5 Crystals under Inert Gas Flow von Enkhtsolmon, Otgonbayar, Munkhsaikhan, Gonchigsuren, Ganchimeg, Yunden, Enkhtuul, Mendsaikhan, Batdemberel, Ganbat, Otgonbayar, Dugerjav

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Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer von Kim, Hidong, Dugerjav, Otgonbayar, Lkhagvasuren, Altaibaatar, Seo, Jae M

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Scanning Tunneling Microscopy Observation of WSe2 Surface von Munkhsaikhan, Gonchigsuren, Bayarsaikhan, Odontuya, Ragchaa, Buyanjargal, Naranchimeg, Dagviikhorol, Dugerjav, Otgonbayar

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Initial CaF2 reactions on Si(114)-21: Isolated silicides, faceting and partial CaF adsorption von Kim, Hidong, Duvjir, Ganbat, Dugerjav, Otgonbayar, Li, Huiting, Seo, Jae M

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Initial CaF2 reactions on Si(114)-2×1: Isolated silicides, faceting and partial CaF adsorption von Kim, Hidong, Duvjir, Ganbat, Dugerjav, Otgonbayar, Li, Huiting, Seo, Jae M.

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Ca-induced structural transformation of the single-domain Si(001) surface: CaF2/Si(001)-4° off von Kim, Hidong, Dugerjav, Otgonbayar, Arvisbaatar, Amarmunkh, Motlak, Moaaed, Seo, Jae M.

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Ca-induced structural transformation of the single-domain Si(001) surface: CaF sub(2)/Si(001)-4[degrees] off von Kim, Hidong, Dugerjav, Otgonbayar, Arvisbaatar, Amarmunkh, Motlak, Moaaed, Seo, Jae M

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Surface reconstruction at the initial Ge adsorption stage on Si(114)-2 × 1 von Duvjir, Ganbat, Kim, Hidong, Dugerjav, Otgonbayar, Li, Huiting, Motlak, Moaaed, Arvisbaatar, Amarmunkh, Seo, Jae M.

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Self-limited growth of the CaF nanowire on the Si(5 5 12)-2ANBXANB1 template von Kim, Hidong, Duvjir, Ganbat, Dugerjav, Otgonbayar, Li, Huiting, Motlak, Moaaed, Arvisbaatar, Amarmunkh, Seo, Jae M

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Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2×1: Tensile stress induced by substrate chain structures von Kim, Hidong, Dugerjav, Otgonbayar, Duvjir, Ganbat, Li, Huiting, Seo, Jae M.

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Self-limited growth of the CaF nanowire on the Si(5 5 12)-2×1 template von Kim, Hidong, Duvjir, Ganbat, Dugerjav, Otgonbayar, Li, Huiting, Motlak, Moaaed, Arvisbaatar, Amarmunkh, Seo, Jae M.

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Stress-driven structural transformation of Sb-passivated Si(114) von Kim, Hidong, Dugerjav, Otgonbayar, Duvjir, Ganbat, Li, Huiting, Jang, Seunghun, Han, Moonsup, Yu, B.D., Seo, Jae M.

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