Low-frequency noise in SOI four-gate transistors von Akarvardar, K., Dufrene, B.M., Cristoloveanu, S., Gentil, P., Blalock, B.J., Mojarradi, M.M.

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Investigation of the four-gate action in G(4)-FETs von Dufrene, B, Akarvardar, K, Cristoloveanu, S, Blalock, B J, Gentil, R, Kolawa, E, Mojarradi, M M

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I-POP! Development of a Nutrition Education and Positive Behavioral Support Program in Mississippi Head Start Centers von Huye, H., Connell, C., Dufrene, B., Yadrick, K., Newkirk, C.

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A review of SiC static induction transistor development for high-frequency power amplifiers von Sung, Y.M., Casady, J.B., Dufrene, J.B., Agarwal, A.K.

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Hydrogen interaction with defects and impurities in 6H-SiC von KOSHKA, Yaroslav, DUFRENE, Janna B, CASADY, Jeffrey B

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Investigation of the Four-Gate Action in $hbox G^4$ -FETs von Dufrene, B., Akarvardar, K., Cristoloveanu, S., Blalock, B.J., Gentil, P., Kolawa, E., Mojarradi, M.M.

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The 2000 presidential election and the information cost of sensitive versus non-sensitive S&P 500 stocks von He, Yan, Lin, Hai, Wu, Chunchi, Dufrene, Uric B.

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Subthreshold slope modulation in G4-FET transistors von DUFRENE, B, BLALOCK, B, CRISTOLOVEANU, S, AKARVARDAR, K, HIGASHINO, T, MOJARRADI, M

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Subthreshold slope modulation in G4-FET transistors von Dufrene, B

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The Four-Gate Transistor von Cristoloveanu, S., Blalock, B., Allibert, F., Dufrene, B., Mojarradi, M.

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Neural-network-based parasitic modeling and extraction verification for RF/millimeter-wave integrated circuit design von Sen, P., Woods, W.H., Sarkar, S., Pratap, R.J., Dufrene, B.M., Mukhopadhyay, R., Chang-Ho Lee, Mina, E.F., Laskar, J.

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On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal von Sankin, I., Casady, J.B., Dufrene, J.B., Draper, W.A., Kretchmer, J., Vandersand, J., Kumar, V., Mazzola, M.S., Saddow, S.E.

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Surface vs. bulk noise in SOI four-gate transistors von Akarvardar, K., Dufrene, B., Cristoloveanu, S., Chroboczek, J.A., Gentil, P., Blalock, B.J., Mojarradi, M.

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Evidence for reduction of noise and radiation effects in G/sup 4/-FET depletion-all-around operation von Akarvardar, K., Cristoloveanu, S., Dufrene, B., Gentil, P., Schrimpf, R.D., Blalock, B.J., Chroboczek, J.A., Mojarradi, M.

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Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination von Merrett, J. Neil, Dufrene, J.B., Sankin, Igor, Casady, Jeff B.

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Investigation of the four-gate action in G/sup 4/-FETs von Dufrene, B., Akarvardar, K., Cristoloveanu, S., Blalock, B.J., Gentil, R., Kolawa, E., Mojarradi, M.M.

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Investigation of the four-gate action in G4-FETs von DUFRENE, B, AKARVARDAR, K, CRISTOLOVEANU, S, BLALOCK, B. J, GENTIL, P, KOLAWA, E, MOJARRADI, M. M

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SOI CMOS Technology with 360GHz fT NFET, 260GHz fT PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications von Sungjae Lee, Jonghae Kim, Daeik Kim, Jagannathan, B., Choongyeun Cho, Johnson, J., Dufrene, B., Zamdmer, N., Wagner, L., Williams, R., Fried, D., Ken Rim, Pekarik, J., Springer, S., Plouchart, J.-O., Freeman, G.

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Subthreshold slope modulation in G 4-FET transistors von Dufrene, B., Blalock, B., Cristoloveanu, S., Akarvardar, K., Higashino, T., Mojarradi, M.

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Investment implications of the korean financial market reform von Ayadi, O.Felix, Dufrene, Uric B., Chatterjee, Amitava

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