Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures von Tikhomirov, V. G., Maleev, N. A., Kuzmenkov, A. G., Solov’ev, Yu. V., Gladyshev, A. G., Kulagina, M. M., Zemlyakov, V. E., Dudinov, K. V., Yankevich, V. B., Bobyl, A. V., Ustinov, V. M.

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Unlocal Heat Generation Picualitiers in High Power Submicrometer Gate FET'S von Dudinov, K.V., Ippolitov, V.M., Pashkovsky, A.B.

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UHF INTEGRAL CIRCUIT BOARD von NAUMOV V.L, TEMNOV A.M, DUDINOV K.V

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CHIP WIRING DEVICE von NAUMOV V.L, TEMNOV A.M, DUDINOV K.V

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Application of CVD-diamond substrates for microwave semiconductor devices von Dudinov, K.V., Temnov, A.M., Lapin, V.G., Averin, V.V.

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