Salicidation process using NiSi and its device application von Deng, F., Johnson, R. A., Asbeck, P. M., Lau, S. S., Dubbelday, W. B., Hsiao, T., Woo, J.

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The growth of SiGe on sapphire using rapid thermal chemical vapor deposition von Dubbelday, W.B, Kavanagh, K.L

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Photoluminescent thin-film porous silicon on sapphire von DUBBELDAY, W. B, SZAFLARSKI, D. M, SHIMABUKURO, R. L, RUSSELL, S. D, SAILOR, M. J

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Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire von Mathew, S.J., Guofu Niu, Dubbelday, W.B., Cressler, J.D.

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Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire von Mathew, S.J., Guofu Niu, Dubbelday, W.B., Cressler, J.D., Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S., Lagnado, I.

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Structural investigation of self-aligned silicidation on separation by implantation oxygen von Deng, F., Ring, K., Guan, Z. F., Lau, S. S., Dubbelday, W. B., Wang, N., Fung, K. K.

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The effects of microcrystalline structure on the photoluminescence of porous silicon-on-sapphire von Russell, S. D., Dubbelday, W. B., Georgief, P., Shimabukuro, R. L., de la Houssaye, P. R.

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Radiation-induced back-channel leakage in SiGe CMOS on silicon-on-sapphire (SOS) technology von Mathew, S.J., Guofu Niu, Clark, S.D., Cressler, J.D., Palmer, M.J., Dubbelday, W.B.

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Real-time dynamic security assessment: fast simulation and modeling applied to emergency outage security of the electric grid von Schainker, R., Miller, P., Dubbelday, W., Hirsch, P., Guorui Zhang

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Silicon-on-sapphire for RF Si systems 2000 von Lagnado, I., de la Houssaye, P.R., Dubbelday, W.B., Koester, S.J., Hammond, R., Chu, J.O., Ott, J.A., Mooney, P.M., Perraud, L., Jenkins, K.A.

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Porous Silicon for Pumping Solid-State Lasers von Russell, S D, Dubbelday, W B, Shimabukuro, R L

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Deep salicidation using nickel for suppressing the floating body effect in partially depleted SOI-MOSFET von Deng, F., Johnson, R.A., Dubbelday, W.B., Garcia, G.A., Asbeck, P.M., Lau, S.S.

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Photonic Silicon Device Physics von Russell, S. D, Dubbelday, W. B, Shimabukuro, R. L, De La Houssaye, P. R

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Photoluminescent Thin-Films Porous Silicon on Sapphire von Dubbelday, W B, Szaflarski, Diane M, Shimabukuro, R L, Russell, S D, Sailor, Michael J

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Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire von Mathew, S.J., Niu, G., Dubbelday, W.B., Cressler, J.D., Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S., Lagnado, I.

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Effect of Ge profile on the frequency response of a SiGe pFET on sapphire technology von Mathew, S.J., Ansley, W.E., Dubbelday, W.B., Cressler, J.D., Ott, J., Chu, J.O., Meyerson, B.S., Kavanagh, K.L., Mooney, P.M., Lagnado, I.

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Influence of shear modulus on the behavior of acoustically transparent materials von Dubbelday, Pieter S., Rittenmyer, Kurt W.

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Ferrofluid transducer von Dubbelday, Pieter S., Timme, Robert W.

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Comparison of constrained layer damping models von Fausett, Donald W., Fausett, Laurene V., Dubbelday, Pieter S.

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Ferrofluid transducer von DUBBELDAY, PIETER S, TIMME, ROBERT W

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