Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission von Gray, A. X., Minár, J., Ueda, S., Stone, P. R., Yamashita, Y., Fujii, J., Braun, J., Plucinski, L., Schneider, C. M., Panaccione, G., Ebert, H., Dubon, O. D., Kobayashi, K., Fadley, C. S.

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Orientation-Dependent Growth Mechanisms of Graphene Islands on Ir(111) von Rogge, P. C, Nie, S, McCarty, K. F, Bartelt, N. C, Dubon, O. D

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Diluted II-VI oxide semiconductors with multiple band gaps von Yu, K M, Walukiewicz, W, Wu, J, Shan, W, Beeman, J W, Scarpulla, M A, Dubon, O D, Becla, P

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Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides von We na, M, Kudrawiec, R, Nabetani, Y, Tanaka, T, Jaquez, M, Dubon, O D, Yu, K M, Walukiewicz, W

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Multiband GaNAsP quaternary alloys von Yu, K. M., Walukiewicz, W., Ager, J. W., Bour, D., Farshchi, R., Dubon, O. D., Li, S. X., Sharp, I. D., Haller, E. E.

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Valence band anticrossing in GaBixAs1−x von Alberi, K., Dubon, O. D., Walukiewicz, W., Yu, K. M., Bertulis, K., Krotkus, A.

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Reversible phase changes in Ge-Au nanoparticles von Guzman, J., Boswell-Koller, C. N., Beeman, J. W., Bustillo, K. C., Conry, T., Dubón, O. D., Hansen, W. L., Levander, A. X., Liao, C. Y., Lieten, R. R., Sawyer, C. A., Sherburne, M. P., Shin, S. J., Stone, P. R., Watanabe, M., Yu, K. M., Ager, J. W., Chrzan, D. C., Haller, E. E.

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Embedded Binary Eutectic Alloy Nanostructures: A New Class of Phase Change Materials von Shin, S. J, Guzman, J, Yuan, C.-W, Liao, Christopher Y, Boswell-Koller, Cosima N, Stone, P. R, Dubon, O. D, Minor, A. M, Watanabe, Masashi, Beeman, Jeffrey W, Yu, K. M, Ager, J. W, Chrzan, D. C, Haller, E. E

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Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters von Guzman, J., Shin, S. J., Liao, C. Y., Yuan, C. W., Stone, P. R., Dubón, O. D., Yu, K. M., Beeman, J. W., Watanabe, M., Ager, J. W., Chrzan, D. C., Haller, E. E.

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Metal-Induced Assembly of a Semiconductor Island Lattice:  Ge Truncated Pyramids on Au-Patterned Si von Robinson, J. T, Liddle, J. A, Minor, A, Radmilovic, V, Yi, D. O, Greaney, P. Alex, Long, K. N, Chrzan, D. C, Dubon, O. D

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Crystal structure and properties of CdxZn1−xO alloys across the full composition range von Detert, D. M., Lim, S. H. M., Tom, K., Luce, A. V., Anders, A., Dubon, O. D., Yu, K. M., Walukiewicz, W.

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Ferromagnetic Ga1−xMnxAs produced by ion implantation and pulsed-laser melting von Scarpulla, M. A., Dubon, O. D., Yu, K. M., Monteiro, O., Pillai, M. R., Aziz, M. J., Ridgway, M. C.

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Chemical Nanomachining of Silicon by Gold-Catalyzed Oxidation von Robinson, J. T, Evans, P. G, Liddle, J. A, Dubon, O. D

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THz transient photoconductivity of the III-V dilute nitride GaPyAs1−y−xNx von Heyman, J N, Weiss, E M, Rollag, J R, Yu, K M, Dubon, O D, Kuang, Y J, Tu, C W, Walukiewicz, W

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Mutual passivation of electrically active and isovalent impurities von Yu, K.M, Walukiewicz, W, Wu, J, Mars, D.E, Chamberlin, D.R, Scarpulla, M.A, Dubon, O.D, Geisz, J.F

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Sculpting semiconductor heteroepitaxial islands: from dots to rods von Robinson, J T, Walko, D A, Arms, D A, Tinberg, D S, Evans, P G, Cao, Y, Liddle, J A, Rastelli, A, Schmidt, O G, Dubon, O D

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Microstructure of Mg doped GaNAs alloys von Liliental-Weber, Z., Reis, R. dos, Novikov, S. V., Yu, K. M., Levander, A. X., Dubon, O. D., Wu, J., Walukiewicz, W., Foxon, C. T.

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Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy von Yu, K. M., Sarney, W. L., Novikov, S. V., Detert, D., Zhao, R., Denlinger, J. D., Svensson, S. P., Dubon, O. D., Walukiewicz, W., Foxon, C. T.

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Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting von Dubon, O.D., Scarpulla, M.A., Farshchi, R., Yu, K.M.

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THz transient photoconductivity of the III–V dilute nitride GaP y As 1− y − x N x von Heyman, J N, Weiss, E M, Rollag, J R, Yu, K M, Dubon, O D, Kuang, Y J, Tu, C W, Walukiewicz, W

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