Characterization and Application of PVDF and Its Copolymer Films Prepared by Spin-Coating and Langmuir-Blodgett Method von Yin, Zerun, Tian, Bobo, Zhu, Qiuxiang, Duan, Chungang

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Self-powered energy-harvesting magnetic field sensor von Hu, Lizhi, Wu, Hanzhou, Zhang, Qianshi, You, Haoran, Jiao, Jie, Luo, Haosu, Wang, Yaojin, Gao, Anran, Duan, Chungang

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Ferroelectric polymers for neuromorphic computing von Niu, Xuezhong, Tian, Bobo, Zhu, Qiuxiang, Dkhil, Brahim, Duan, Chungang

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Multiresistance states in ferro- and antiferroelectric trilayer boron nitride von Lv, Ming, Wang, Jiulong, Tian, Ming, Wan, Neng, Tong, Wenyi, Duan, Chungang, Xue, Jiamin

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Topology paving the way to controllable readout of ferroelectricity —self-assembled topologically confined domain walls become the key to ferroelectric memory von Duan, Chungang

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Retinomorphic hardware for in‐sensor computing von Feng, Guangdi, Zhang, Xiaoxu, Tian, Bobo, Duan, Chungang

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Synaptic devices with sodium alginate ionic gel gating for global regulation von Liu, Yifei, Feng, Guangdi, Zhu, Qiuxiang, Xu, Yu, Hao, Shenglan, Qu, Ke, Tian, Bobo, Duan, Chungang

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New-Generation Ferroelectric AlScN Materials von Zhang, Yalong, Zhu, Qiuxiang, Tian, Bobo, Duan, Chungang

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ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles von Liu, Huan, Peng, Yue, Han, Genquan, Liu, Yan, Zhong, Ni, Duan, Chungang, Hao, Yue

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Ultralow‐Power Machine Vision with Self‐Powered Sensor Reservoir von Lao, Jie, Yan, Mengge, Tian, Bobo, Jiang, Chunli, Luo, Chunhua, Xie, Zhuozhuang, Zhu, Qiuxiang, Bao, Zhiqiang, Zhong, Ni, Tang, Xiaodong, Sun, Linfeng, Wu, Guangjian, Wang, Jianlu, Peng, Hui, Chu, Junhao, Duan, Chungang

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Atomic-level polarization reversal in sliding ferroelectric semiconductors von Sui, Fengrui, Li, Haoyang, Qi, Ruijuan, Jin, Min, Lv, Zhiwei, Wu, Menghao, Liu, Xuechao, Zheng, Yufan, Liu, Beituo, Ge, Rui, Wu, Yu-Ning, Huang, Rong, Yue, Fangyu, Chu, Junhao, Duan, Chungang

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Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory von Peng, Yue, Han, Genquan, Liu, Fenning, Xiao, Wenwu, Liu, Yan, Zhong, Ni, Duan, Chungang, Feng, Ze, Dong, Hong, Hao, Yue

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Indirect-direct band gap transition of two-dimensional arsenic layered semiconductors cousins of black phosphorus von Luo, Kun, Chen, ShiYou, Duan, ChunGang

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Scaling behavior for (Bi0.5Na0.5)TiO3 based lead-free relaxor ferroelectric ceramics von Peng, Ping, Nie, Hengchang, Liu, Zhen, Wang, Genshui, Dong, Xianlin, Zhang, Yuanyuan, Duan, Chungang, Tang, Xiaodong

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Low-k nano-dielectrics facilitate electric-field induced phase transition in high-k ferroelectric polymers for sustainable electrocaloric refrigeration von Li, Qiang, Wei, Luqi, Zhong, Ni, Shi, Xiaoming, Han, Donglin, Zheng, Shanyu, Du, Feihong, Shi, Junye, Chen, Jiangping, Huang, Houbing, Duan, Chungang, Qian, Xiaoshi

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ZrO2 Ferroelectric FET for Non-volatile Memory Application von Liu, Huan, Wang, Chengxu, Han, Genquan, Li, Jing, Peng, Yue, Liu, Yan, Wang, Xingsheng, Zhong, Ni, Duan, Chungang, Wang, Xinran, Xu, Nuo, Liu, Tsu-Jae King, Hao, Yue

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VSe2/carbon-nanotube compound for all solid-state flexible in-plane supercapacitor von Wang, Chaolun, Wu, Xing, Xu, Hejun, Zhu, Yujin, Liang, Fang, Luo, Chen, Xia, Yin, Xie, Xinying, Zhang, Jian, Duan, Chungang

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H2O2 decomposition catalyzed by strontium cobaltites and their application in Rhodamine B degradation in aqueous medium von Xu, Wen, Cao, Bo, Lin, Hechun, Cheng, Wenjuan, Luo, Chunhua, Peng, Hui, Duan, Chungang

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Author Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors von Sui, Fengrui, Li, Haoyang, Qi, Ruijuan, Jin, Min, Lv, Zhiwei, Wu, Menghao, Liu, Xuechao, Zheng, Yufan, Liu, Beituo, Ge, Rui, Wu, Yu-Ning, Huang, Rong, Yue, Fangyu, Chu, Junhao, Duan, Chungang

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