Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers von Yunin, P.A., Drozdov, Yu.N., Drozdov, M.N., Khrykin, O.I., Shashkin, V.I.

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NV‐Center Formation in Single Crystal Diamond at Different CVD Growth Conditions von Lobaev, Mikhail A., Gorbachev, Alexei M., Bogdanov, Sergey A., Vikharev, Anatoly L., Radishev, Dmitry B., Isaev, Vladimir A., Drozdov, Mikhail N.

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Decomposition of ultrathin LiF cathode underlayer in organic-based devices evidenced by ToF-SIMS depth profiling von Pakhomov, Georgy L., Drozdov, Mikhail N., Travkin, Vlad V., Bochkarev, Mikhail N.

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A New Approach to TOF-SIMS Analysis of the Phase Composition of Carbon-Containing Materials von Drozdov, M. N., Drozdov, Yu. N., Okhapkin, A. I., Kraev, S. A., Lobaev, M. V.

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Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry von Drozdov, M.N., Drozdov, Y.N., Csik, A., Novikov, A.V., Vad, K., Yunin, P.A., Yurasov, D.V., Belykh, S.F., Gololobov, G.P., Suvorov, D.V., Tolstogouzov, A.

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New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry von Drozdov, M. N., Drozdov, Yu. N., Lobaev, M. A., Yunin, P. A.

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Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers von Drozdov, M. N., Demidov, E. V., Drozdov, Yu. N., Kraev, S. A., Shashkin, V. I., Arkhipova, E. A., Lobaev, M. A., Vikharev, A. L., Gorbachev, A. M., Radishchev, D. B., Isaev, V. A., Bogdanov, S. A.

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The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond von Drozdov, M. N., Arkhipova, E. A., Drozdov, Yu. N., Kraev, S. A., Shashkin, V. I., Parafin, A. E., Lobaev, M. A., Vikharev, A. L., Gorbachev, A. M., Radishchev, D. B., Isaev, V. A., Bogdanov, S. A.

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(Na, Zr) and (Ca, Zr) Phosphate-Molybdates and Phosphate-Tungstates: II-Radiation Test and Hydrolytic Stability von Karaeva, M E, Savinykh, D O, Orlova, A I, Nokhrin, A V, Boldin, M S, Murashov, A A, Chuvil'deev, V N, Skuratov, V A, Issatov, A T, Yunin, P A, Nazarov, A A, Drozdov, M N, Potanina, E A, Tabachkova, N Y

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A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam von Drozdov, M. N., Drozdov, Yu. N., Novikov, A. V., Yunin, P. A., Yurasov, D. V.

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Study of oxidation processes in Mo/Be multilayers von Nechay, A. N., Chkhalo, N. I., Drozdov, M. N., Garakhin, S. A., Pariev, D. E., Polkovnikov, V. N., Salashchenko, N. N., Svechnikov, M. V., Vainer, Yu. A., Meltchakov, E., Delmotte, F.

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Prognostic value of proadrenomedullin in patients with COVID-19 pneumonia von Astapovskii, Aleksandr A., Drozdov, Vladimir N., Shikh, Evgenia V., Melkonyan, George G., Sizova, Zhanna M., Zakharova, Valeria L., Shindryaeva, Natalia N., Lapidus, Natalia I.

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Features of the Vapor-Phase Epitaxy of GaAs on Nonplanar Substrates von Drozdov, Yu. N., Kraev, S. A., Okhapkin, A. I., Daniltsev, V. M., Skorokhodov, E. V.

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SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp(2) and sp(3) Hybridization States von Drozdov, M. N., Drozdov, Yu. N., Okhapkin, A. I., Yunin, P. A., Streletskii, O. A., Ieshkin, A. E.

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SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp2 and sp3 Hybridization States von Drozdov, M. N., Drozdov, Yu. N., Okhapkin, A. I., Yunin, P. A., Streletskii, O. A., Ieshkin, A. E.

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Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques von Ber, B., Bábor, P., Brunkov, P.N., Chapon, P., Drozdov, M.N., Duda, R., Kazantsev, D., Polkovnikov, V.N., Yunin, P., Tolstogouzov, A.

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Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source von Daniltsev, V. M., Demidov, E. V., Drozdov, M. N., Drozdov, Yu. N., Kraev, S. A., Surovegina, E. A., Shashkin, V. I., Yunin, P. A.

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Development of a pump-ejector system for SWAG injection into reservoir using associated petroleum gas from the annulus space of production wells von Drozdov, Alexander, Gorelkina, Еvgeniya

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Novel microwave plasma-assisted CVD reactor for diamond delta doping von Vikharev, A. L., Gorbachev, A. M., Lobaev, M. A., Muchnikov, A. B., Radishev, D. B., Isaev, V. A., Chernov, V. V., Bogdanov, S. A., Drozdov, M. N., Butler, J. E.

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Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor von Mansfeld, D.А., Vodopyanov, А.V., Golubev, S.V., Sennikov, P.G., Mochalov, L.A., Andreev, B.А., Drozdov, Yu N., Drozdov, М.N., Shashkin, V.I., Bulkin, P., Roca i Cabarrocas, P.

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