Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating von Badami, O., Lizzit, D., Driussi, F., Palestri, P., Esseni, D.

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Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation von Fontanini, R., Segatto, M., Nair, K. S., Holzer, M., Driussi, F., Hausler, I., Koch, C. T., Dubourdieu, C., Deshpande, V., Esseni, D.

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Improved understanding of metal–graphene contacts von Driussi, F., Venica, S., Gahoi, A., Gambi, A., Giannozzi, P., Kataria, S., Lemme, M.C., Palestri, P., Esseni, D.

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Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions von Fontanini, R., Barbot, J., Segatto, M., Lancaster, S., Duong, Q., Driussi, F., Grenouillet, L., Triozon, L., Coignus, J., Mikolajick, T., Slesazeck, S., Esseni, D.

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Modeling, simulation and design of the vertical Graphene Base Transistor von Driussi, F., Palestri, P., Selmi, L.

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On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks von Toniutti, P., Palestri, P., Esseni, D., Driussi, F., De Michielis, M., Selmi, L.

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A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions von Pilotto, A., Palestri, P., Selmi, L., Antonelli, M., Arfelli, F., Biasiol, G., Cautero, G., Driussi, F., Menk, R. H., Nichetti, C., Steinhartova, T.

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Study of gain, noise, and collection efficiency of GaAs SAM-APDs single pixel von Colja, M., Cautero, M., Menk, R.H., Palestri, P., Gianoncelli, A., Antonelli, M., Biasiol, G., Zilio, S.D., Steinhartova, T., Nichetti, C., Arfelli, F., De Angelis, D., Driussi, F., Bonanni, V., Pilotto, A., Gariani, G., Carrato, S., Cautero, G.

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Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection von Pilotto, A., Antonelli, M., Arfelli, F., Biasiol, G., Cautero, G., Cautero, M., Colja, M., Driussi, F., Esseni, D., Menk, R.H., Nichetti, C., Rosset, F., Selmi, L., Steinhartova, T., Palestri, P.

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Mobility extraction in SOI MOSFETs with sub 1 nm body thickness von Schmidt, M., Lemme, M.C., Gottlob, H.D.B., Driussi, F., Selmi, L., Kurz, H.

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Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells von Vianello, E., Driussi, F., Arreghini, A., Palestri, P., Esseni, D., Selmi, L., Akil, N., van Duuren, M.J., Golubovic, D.S.

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Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions von Nichetti, C., Steinhartova, T., Antonelli, M., Cautero, G., Menk, R.H., Pilotto, A., Driussi, F., Palestri, P., Selmi, L., Arfelli, F., Biasiol, G.

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Simulation Study of Coulomb Mobility in Strained Silicon von Driussi, F., Esseni, D.

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Analytical Models for the Insight Into the Use of Alternative Channel Materials in Ballistic nano-MOSFETs von De Michielis, M., Esseni, D., Driussi, F.

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Influence of δ p-doping on the behaviour of GaAs/AlGaAs SAM-APDs for synchrotron radiation von Steinhartova, T., Nichetti, C., Antonelli, M., Cautero, G., Menk, R.H., Pilotto, A., Driussi, F., Palestri, P., Selmi, L., Koshmak, K., Nannarone, S., Arfelli, F., Zilio, S. Dal, Biasiol, G.

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Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells von Arreghini, A., Driussi, F., Vianello, E., Esseni, D., van Duuren, M.J., Golubovic, D.S., Akil, N., van Schaijk, R.

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Long term charge retention dynamics of SONOS cells von Arreghini, A., Akil, N., Driussi, F., Esseni, D., Selmi, L., van Duuren, M.J.

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Simulation study of Fermi level depinning in metal-MoS2 contacts von Khakbaz, P., Driussi, F., Giannozzi, P., Gambi, A., Esseni, D.

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Program efficiency and high temperature retention of SiN/high- K based memories von Vianello, E., Bocquet, M., Driussi, F., Perniola, L., Molas, G., Selmi, L.

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Engineering of metal-MoS2 contacts to overcome Fermi level pinning von Khakbaz, P., Driussi, F., Giannozzi, P., Gambi, A., Lizzit, D., Esseni, D.

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