Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range von Hahn, L., Fuchs, F., Kirste, L., Driad, R., Rutz, F., Passow, T., Köhler, K., Rehm, R., Ambacher, O.

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Broadly tunable hetero-cascading quantum cascade lasers: Design, growth, and external cavity operation von Yang, Q.K., Hugger, S., Aidam, R., Driad, R., Schilling, C., Heußen, H., Kirste, L., Ostendorf, R.

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Dispersion of effective refractive indices of mid-infrared quantum cascade lasers von Yang, Q., Kinzer, M., Aidam, R., Driad, R., Bronner, W., Hugger, S., Ostendorf, R., Fuchs, F., Wagner, J.

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ETDM Transmitter Module for 100-Gb/s Ethernet von Chacinski, M., Westergren, U., Thylen, L., Stoltz, B., Rosenzweig, J., Driad, R., Makon, R.E., Jie Li, Steffan, A.

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High-Speed Selector-Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs von Driad, R., Makon, R. E., Ritter, D.

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InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation von HURM, V, BENKHELIFA, F, DRIAD, R, LÖSCH, R, MAKON, R, MASSLER, H, ROSENZWEIG, J, SCHLECHTWEG, M, WALCHER, H

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InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications von HURM, V, MAKON, R. E, WALCHER, H, DRIAD, R, BENKHELIFA, F, LÖSCH, R, MASSLER, H, RIESSLE, M, ROSENZWEIG, J, SCHLECHTWEG, M, TESSMANN, A

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Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors von Driad, R., Lösch, R., Benkhelifa, F., Kuri, M., Rosenzweig, J.

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Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation von Schneider, K., Driad, R., Makon, R.E., Massler, H., Ludwig, M., Quay, R., Schlechtweg, M., Weimann, G.

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Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment von Driad, R., Lu, Z. H., Charbonneau, S., McKinnon, W. R., Laframboise, S., Poole, P. J., McAlister, S. P.

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Solid source MBE growth on InP-based DHBTs for high-speed data communication von Aidam, R., Lösch, R., Driad, R., Schneider, K., Makon, R.

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InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s von Makon, R.E., Driad, R., Schneider, K., Ludwig, M., Aidam, R., Quay, R., Schlechtweg, M., Weimann, G.

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AlN based microgenerators for powering implantable sensor devices von Bludau, O., Röhlig, C.-C., Knöbber, F., Kirste, L., Sah, R. E., Driad, R., Pletschen, W., Lebedev, V., Cimalla, V.

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Buried-Heterostructure Quantum Cascade Lasers Fabricated Using a Sacrificial Layer and a Two-Step Regrowth Process von Driad, Rachid, Bächle, Andreas, Aidam, Rolf, Yang, Quankui

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InP-based DHBT technology for high-speed mixed signal and digital applications von Driad, R., Makon, R.E., Hurm, V., Benkhelifa, F., Losch, R., Rosenzweig, J., Schlechtweg, M.

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Fundamental low phase noise InP-based DHBT VCO operating up to 89 GHz von MAKON, R. E, DRIAD, R, SCHNEIDER, K, MABLER, H, AIDAM, R, QUAY, R, SCHLECHTWEG, M, WEIMANN, G

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112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE von Li, J, Schubert, C, Derksen, R H, Makon, R E, Hurm, V, Djupsjöbacka, A, Chacinski, M, Westergren, U, Bach, H.-G, Mekonnen, G G, Steffan, A G, Driad, R, Walcher, H, Rosenzweig, J

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Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors von McAlister, S. P., McKinnon, W. R., Driad, R., Renaud, A. P.

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Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE von Driad, R., Aidam, R., Quankui Yang

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Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide von Driad, R., Sah, R. E., Schmidt, R., Kirste, L.

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