X-band fully depleted SOI Amplifier with adaptive bias control von Chen, C.L., Wyatt, P.W., Chen, C.K., Knecht, J.M., Yost, D.-R., Drangmeister, R.G., Keast, C.L.

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X-band low noise amplifier using SiGe BiCMOS technology von Patel, V.J., Axtell, H.S., Cerny, C.L., Creech, G.L., Drangmeister, R.G., Gouker, M.A., James, T.L., Mattamana, A.G., Mbuko, I.O., Neidhard, R.A., Nykiel, E.B., Orlando, P.L., Selke, D.L., Wiedemann, J.M., Quach, T.K.

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X-Band Receiver Front-End Chip in Silicon Germanium Technology von Quach, T.K., Bryant, C.A., Creech, G.L., Groves, K.S., James, T.L., Mattamana, A.G., Orlando, P.L., Patel, V.J., Drangmeister, R.G., Johnson, L.M., Kormanyos, B.K., Bonebright, R.K.

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A low voltage SiGe BJT integrated RF amplifier with very high third order intercept point von Kormanyos, B.K., Friddell, T.H., Quach, T.K., Creech, G.L., Orlando, P.L., Patel, V.J., Watson, P.M., Axtell, H.S., Neidhard, R.A., Jessen, G.H., Drangmeister, R.G.

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