Sequential ion beam synthesis of buried Si 3N 4 layers in silicon von Danilin, A.B., Drakin, K.A., Malinin, A.A., Mordkovich, V.N., Petrov, A.F., Saraikin, V.V., Vyletalina, O.I.

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Sequential ion beam synthesis of buried Si3N4 layers in silicon von Danilin, A.B., Drakin, K.A., Malinin, A.A., Mordkovich, V.N., Petrov, A.F., Saraikin, V.V., Vyletalina, O.I.

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Features of buried dielectric layers: ion beam synthesis in silicon by a high temperature sequential oxygen and nitrogen implantation with substoichiometric doses von Charni, L.A., Danilin, A.B., Drakin, K.A., Malinin, A.A., Parkhomenko, Yu.N., Petrov, A.F., Vyletalina, O.I.

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Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon von Danilin, A.B., Drakin, K.A., Kukin, V.V., Malinin, A.A., Mordkovich, V.N., Petrov, A.F., Saraykin, V.V., Vyletalina, O.I.

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Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO2 Precipitates von Danilin, A.B., Vyletalina, O.I., Mordkovich, V.N., Drakin, K.A., Petrov, A.F., Malinin, A.A.

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METHOD FOR MANUFACTURING THIN SEMICONDUCTOR FILMS ON INSULATOR (ALTERNATIVES) von PROSIJ A.D, EVDOKIMOV V.L, LUKASEVICH M.I, GORNEV E.S, DRAKIN K.A, SULIMIN A.D, BUTYRSKAJA M.V

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METHOD FOR MANUFACTURING THIN SEMICONDUCTOR-ON- INSULATOR FILMS (ALTERNATIVES) von MOCHALOV A.I, GAVRILOV S.A, EVDOKIMOV V.L, LUKASEVICH M.I, GORNEV E.S, GROMOV D.G, DRAKIN K.A, SULIMIN A.D

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STRUCTURE SILICON-ON-INSULATOR FOR SUPERLARGE-SCALE INTEGRATED CIRCUIT von MOCHALOV A.I, KLIMOVITSKIJ A.G, EVDOKIMOV V.L, LUKASEVICH M.I, GORNEV E.S, SULIMIN A.D, DRAKIN K.A, GROMOV D.G

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