High performance fully-depleted tri-gate CMOS transistors von Doyle, B.S., Datta, S., Doczy, M., Hareland, S., Jin, B., Kavalieros, J., Linton, T., Murthy, A., Rios, R., Chau, R.

Volltext

The generation and characterization of electron and hole traps created by hole injection during low gate voltage hot-carrier stressing of n-MOS transistors von Doyle, B.S., Bourcerie, M., Bergonzoni, C., Benecchi, R., Bravis, A., Mistry, K.R., Boudou, A.

Volltext

Examination of the time power law dependencies in hot carrier stressing of n-MOS transistors von Doyle, B.S., Mistry, K.R., Faricelli, J.

Volltext

A lifetime prediction method for hot-carrier degradation in surface-channel p-MOS devices von Doyle, B.S., Mistry, K.R.

Volltext

The characterization of hot carrier damage in p-channel transistors von Doyle, B.S., Mistry, K.R.

Volltext

Examination of gradual-junction p-MOS structures for hot carrier control using a new lifetime extraction method von Doyle, B.S., Mistry, K.R., Jackson, D.B.

Volltext

Recovery of hot-carrier damage in reoxidized nitrided oxide MOSFET's von Doyle, B.S., Dunn, G.J.

Volltext

Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide von Bourcerie, M., Doyle, B.S., Marchetaux, J.-C., Soret, J.-C., Boudou, A.

Volltext

Role of nitridation/reoxidation of NH 3 -nitrided gate dielectrics on the hot-carrier resistance of CMOS transistors von Doyle, B.S., Philipossian, A.

Volltext

Relaxation effects in NMOS transistors after hot-carrier stressing von Doyle, B.S., Bourcerie, M., Marchetaux, J.-C., Boudou, A.

Volltext

Role of nitridation/reoxidation of NH3-nitrided gate dielectrics on the hot-carrier resistance of CMOS transistors von Doyle, B.S., Philipossian, A.

Volltext

An empirical model for the L/sub eff/ dependence of hot-carrier lifetimes of n-channel MOSFETs von Mistry, K., Doyle, B.S.

Volltext

Effect of plasma-induced charging damage on n-channel and p-channel MOSFET hot carrier reliability von Mistry, R.R., Fishbein, B.J., Doyle, B.S.

Volltext bestellen

SPICE model and parameters for fully-depleted SOI MOSFET's including self-heating von Su, L.T., Antoniadis, D.A., Arora, N.D., Doyle, B.S., Krakauer, D.B.

Volltext

Analysis of gate oxide thickness hot carrier effects in surface channel P-MOSFET's von Doyle, B.S., Mistry, K.R., Cheng-Liang Huang

Volltext

Circuit design guidelines for n-channel MOSFET hot carrier robustness von Mistry, K.R., Fox, T.F., Preston, R.P., Arora, N.D., Doyle, B.S., Nelsen, D.E.

Volltext

Anomalous hot-carrier behavior for LDD p-channel transistors von Doyle, B.S., Mistry, K.R.

Volltext

New hot carrier failure criterion for p-channel transistors based on transistor leakage currents von Doyle, B.S., Mistry, K.R.

Volltext

p-channel hot-carrier optimization of RNO gate dielectrics through the reoxidation step von Doyle, B.S., Philipossian, A.

Volltext

Examination of oxide damage during high-current stress of n-MOS transistors von Doyle, B.S., Krakauer, D.B., Mistry, K.R.

Volltext