Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates von Storm, D.F., Hardy, M.T., Katzer, D.S., Nepal, N., Downey, B.P., Meyer, D.J., McConkie, Thomas O., Zhou, Lin, Smith, David J.

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Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy von Downey, B.P, Katzer, D.S, Nepal, N, Meyer, D.J, Storm, D.F, Wheeler, V.D, Hardy, M.T

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Electrical characterisation of epitaxial AlN/Nb 2 N heterostructures grown by molecular beam epitaxy von Downey, B.P., Katzer, D.S., Nepal, N., Meyer, D.J., Storm, D.F., Wheeler, V.D., Hardy, M.T.

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Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS–HEMTs von Downey, B.P., Meyer, D.J., Katzer, D.S., Marron, T.M., Pan, M., Gao, X.

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Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates von Hardy, M.T., Storm, D.F., Nepal, N., Katzer, D.S., Downey, B.P., Meyer, D.J.

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Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN von Storm, D.F., McConkie, T., Katzer, D.S., Downey, B.P., Hardy, M.T., Meyer, D.J., Smith, David J.

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Electrical characterization of Schottky contacts to N-polar GaN von Downey, B.P., Meyer, D.J., Katzer, D.S., Storm, D.F., Binari, S.C.

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Investigation of N-Polar AlGaN/GaN and InAlN/GaN Thin Films Grown by MBE von McConkie, T.O., Hardy, M.T., Storm, D.F., Downey, B.P., Katzer, D.S., Meyer, D.J., Nepal, N., Smith, D.J.

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Current-Induced Degradation of Nickel Ohmic Contacts to SiC von Downey, B.P., Flemish, J.R., Liu, B.Z., Clark, T.E., Mohney, S.E.

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