Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy von Qian, W., Rohrer, G. S., Skowronski, M., Doverspike, K., Rowland, L. B., Gaskill, D. K.

Volltext

Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy von Qian, W., Skowronski, M., De Graef, M., Doverspike, K., Rowland, L. B., Gaskill, D. K.

Volltext

The growth and properties of Al and AlN films on GaN(0001)–(1×1) von Bermudez, V. M., Jung, T. M., Doverspike, K., Wickenden, A. E.

Volltext

H, He, and N implant isolation of n-type GaN von Binari, S. C., Dietrich, H. B., Kelner, G., Rowland, L. B., Doverspike, K., Wickenden, D. K.

Volltext

GaN FETs for microwave and high-temperature applications von Binari, Steven C., Doverspike, K., Kelner, G., Dietrich, H.B., Wickenden, A.E.

Volltext

Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy von Vertikov, A., Nurmikko, A. V., Doverspike, K., Bulman, G., Edmond, J.

Volltext

Gain characteristics of InGaN/GaN quantum well diode lasers von Song, Y.-K., Kuball, M., Nurmikko, A. V., Bulman, G. E., Doverspike, K., Sheppard, S. T., Weeks, T. W., Leonard, M., Kong, H. S., Dieringer, H., Edmond, J.

Volltext

Observation of nanopipes in α-GaN crystals von Qian, W., Skowronski, M., Doverspike, K., Rowland, L.B., Gaskill, D.K.

Volltext

The effect of organometallic vapor phase epitaxial growth conditions of Wurtzite GaN electron transport properties von GASKILL, D. K, WICKENDEN, A. E, DOVERSPIKE, K, TADAYON, B, ROWLAND, L. B

Volltext

Properties, Processing and Applications of Gallium Nitride and Related Semiconductors von Strite Samual (Toby), Wetzel Christian, Akasaki Isamu, Edgar James H, Amano Hiroshi

Volltext

Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide von Allen, S.T., Palmour, John W., Sheppard, S.T., Doverspike, K., Pribble, W.L., Leonard, M.

Volltext

Preparation and characterization of copper zinc germanium sulfide selenide (Cu2ZnGeS4-ySey) von Doverspike, K, Dwight, K, Wold, A

Volltext

Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition von Glaser, ER, Kennedy, TA, Doverspike, K, Rowland, LB, Gaskill, DK, Freitas, Jr, JA, Asif Khan M, Olson, DT, Kuznia, JN, Wickenden, DK

Volltext

Preparation and characterization of members of the system La2-xA1+xCu2O6±y where A = Ca,Sr von DOVERSPIKE, K, LIU, J.-H, DWIGHT, K, WOLD, A

Volltext

Calorimetric absorption spectroscopy and photoluminescence study of defects in diamond von Bilodeau, T.G., Doverspike, K., Strom, U., Freitas, J.A., Rameshan, R.

Volltext

Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films von Doverspike, K., Glaser, E.R., Rowland, L.B., Spaeth, Johann Martin, Koschnick, F.K., Wickenden, D.K., Gaskill, D. Kurt

Volltext

Preparation and properties of the system Cu2Zn1-xFexGeS4 von DOVERSPIKE, K, KERSHAW, R, DWIGHT, K, WOLD, A

Volltext

Preparation and characterization of Cu2Zn1-xMnxGeS4 von HONIG, E, SHEN, H.-S, YAO, G.-Q, DOVERSPIKE, K, KERSHAW, R, DWIGHT, K, WOLD, A

Volltext

Magneto-optical studies of GaN and GaN/Al x Ga1− x N: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance von Wang, Y. J., Kaplan, R., Ng, H. K., Doverspike, K., Gaskill, D. K., Ikedo, T., Akasaki, I., Amono, H.

Volltext

Aerosol doping of flame-grown diamond films von Doverspike, Kathleen, Butler, James E., Freitas, Jaime A.

Volltext