Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition von Vincent, B., Gencarelli, F., Bender, H., Merckling, C., Douhard, B., Petersen, D. H., Hansen, O., Henrichsen, H. H., Meersschaut, J., Vandervorst, W., Heyns, M., Loo, R., Caymax, M.

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Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si von Gupta, S., Shimura, Y., Richard, O., Douhard, B., Simoen, E., Bender, H., Nakatsuka, O., Zaima, S., Loo, R., Heyns, M.

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Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique von Merckling, C., Waldron, N., Jiang, S., Guo, W., Richard, O., Douhard, B., Moussa, A., Vanhaeren, D., Bender, H., Collaert, N., Heyns, M., Thean, A., Caymax, M., Vandervorst, W.

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Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode von El Kazzi, S., Alian, A., Hsu, B., Verhulst, A.S., Walke, A., Favia, P., Douhard, B., Lu, W., del Alamo, J.A., Collaert, N., Merckling, C.

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Molecular depth profiling of polymers with very low energy ions von Houssiau, L., Douhard, B., Mine, N.

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Comparing n- and p-type polycrystalline silicon absorbers in thin-film solar cells von Deckers, J., Bourgeois, E., Jivanescu, M., Abass, A., Van Gestel, D., Van Nieuwenhuysen, K., Douhard, B., D'Haen, J., Nesladek, M., Manca, J., Gordon, I., Bender, H., Stesmans, A., Mertens, R., Poortmans, J.

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Cesium/Xenon dual beam sputtering in a Cameca instrument von Pureti, R., Douhard, B., Joris, D., Merkulov, A., Vandervorst, W.

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Highly Scaled Vertical Cylindrical SONOS Cell With Bilayer Polysilicon Channel for 3-D nand Flash Memory von Van den bosch, G., Kar, G. S., Blomme, P., Arreghini, A., Cacciato, A., Breuil, L., De Keersgieter, A., Paraschiv, V., Vrancken, C., Douhard, B., Richard, O., Van Aerde, S., Debusschere, I., Van Houdt, J.

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Metallic nanoparticles on plasma treated carbon nanotubes: Nanohybrids von Bittencourt, C, Felten, A, Douhard, B, Colomer, J-F, Van Tendeloo, G, Drube, W, Ghijsen, J, Pireaux, J-J

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Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions von Vincent, B., Loo, R., Vandervorst, W., Delmotte, J., Douhard, B., Valev, V.K., Vanbel, M., Verbiest, T., Rip, J., Brijs, B., Conard, T., Claypool, C., Takeuchi, S., Zaima, S., Mitard, J., De Jaeger, B., Dekoster, J., Caymax, M.

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MCsn+ cluster formation on organic surfaces: A novel way to depth-profile organics? von Mine, N., Douhard, B., Houssiau, L.

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Measurement and modeling of work function changes during low energy cesium sputtering von Brison, J., Mine, N., Poisseroux, S., Douhard, B., Vitchev, R.G., Houssiau, L.

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Caesium/xenon dual beam depth profiling: Velocity of the sputtered atom and ionization probability von Brison, J., Douhard, B., Houssiau, L.

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(Invited) Advanced Dielectrics Targeting 2X DRAM MIM Capacitors von Popovici, Mihaela, Swerts, Johan, Aoulaiche, Marc, Redolfi, Augusto, Kaczer, Ben, Kim, Min-Soo, Douhard, Bastien, Delabie, Annelies, Clima, Sergiu, Jurczak, Malgorzata, Van Elshocht, S.

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The Storing Matter technique: Preliminary results on PS and PVC von Philipp, P., Douhard, B., Lacour, F., Wirtz, T., Houssiau, L., Pireaux, J.-J., Migeon, H.-N.

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Contact Resistivity of Highly Doped Si:P, Si:As, and Si:P:As Epi Layers for Source/Drain Epitaxy von Rosseel, Erik, Porret, Clement, Hikavyy, Andriy Yakovitch, Loo, Roger, Tirrito, Matteo, Douhard, Bastien, Richard, Olivier, Horiguchi, Naoto, Khazaka, Rami

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Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO2 von Martens, K, Jeong, J W, Aetukuri, N, Rettner, C, Shukla, N, Freeman, E, Esfahani, D N, Peeters, F M, Topuria, T, Rice, P M

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Characterization of Highly Doped Si:P, Si:As and Si:P:As Epi Layers for Source/Drain Epitaxy von Rosseel, Erik, Tirrito, Matteo, Porret, Clement, Douhard, Bastien, Meersschaut, Johan, Hikavyy, Andriy Yakovitch, Loo, Roger, Horiguchi, Naoto, Pourtois, Geoffrey, Nakazaki, Nabuyo, Tolle, John

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(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration von Porret, Clement, Hikavyy, Andriy Yakovitch, Gomez Granados, Juan Fernando, Baudot, Sylvain, Vohra, Anurag, Kunert, Bernardette, Douhard, Bastien, Bogdanowicz, Janusz, Schaekers, Marc, Kohen, David, Margetis, Joe, Tolle, John, Lima, Lucas, Sammak, Amir, Scappucci, Giordano, Rosseel, Erik, Langer, Robert, Loo, Roger

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Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions von El Kazzi, S., Smets, Q., Ezzedini, M., Rooyackers, R., Verhulst, A., Douhard, B., Bender, H., Collaert, N., Merckling, C., Heyns, M.M, Thean, A.

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