Random telegraph photosignals in a microwave-exposed two-dimensional electronsystem von Dorozhkin, SI, Pfeiffer, L, West, K, von Klitzing, K, Smet, J H

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Defect structure of 4H silicon carbide ingots von Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu

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Invariant relation in the problem of size quantization in a self-consistent potential near the semiconductor boundary von Dorozhkin, S. I.

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Temperature dependence of the compressibility of two-dimensional electron systems with long-range potential fluctuations in the quantum Hall effect regime von Dorokhova, M. O., Dorozhkin, S. I.

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Microwave photoresponse in the two-dimensional electron system caused by intra-Landau-level transitions von Dorozhkin, S. I., Smet, J. H., Umansky, V., von Klitzing, K.

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Effect of hole-hole scattering on the conductivity of the two-component 2D hole gas in GaAs/(AlGa)As heterostructures von Murzin, S. S., Dorozhkin, S. I., Landwehr, G., Gossard, A. C.

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The analysis of mass transfer in system β-SiC–α-SiC under silicon carbide sublimation growth von Avrov, D.D, Bakin, A.S, Dorozhkin, S.I, Rastegaev, V.P, Tairov, Yu.M

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Stress and misoriented area formation under large silicon carbide boule growth von Bakin, A.S., Dorozhkin, S.I., Lebedev, A.O., Kirillov, B.A., Ivanov, A.A., Tairov, Yu.M.

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Incompressible electron phase in field-effect transistors von Dorozhkin, S. I., Dorokhova, M. O.

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Measurements of the compressibility of the composite fermion metallic state in a 2D electron system von Dorozhkin, S.I., Smet, J.H., von Klitzing, K., Umansky, V., Wegscheider, W., Haug, R.J., Ploog, K.

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Aluminium Nitride Bulk Crystals by Sublimation Method: Growth and X-Ray Characterization von Lebedev, Andrew O., Maximov, Andrew Yu, Tairov, Yuri M., Dorozhkin, Sergey I.

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Current filamentation in GaAs/AlGaAs heterojunctions preceding quantum-Hall-effect breakdown von Dorozhkin, S. I., Dorokhova, M. O.

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Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells von Dorozhkin, S. I., Timofeev, V. B., Hvam, J.

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Effect of uniaxial mechanical stress on Shubnikov-de Haas oscillations in hole channels of silicon field-effect transistors von Dorozhkin, S. I., Landwehr, G.

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Comment on “Two-dimensional spin confinement in strained-layer quantum wells” von Dorozhkin, S. I.

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Magnetotransport anomalies in dilute two-dimensional electron systems: an experiment and a model von Dorozhkin, S.I., Emeleus, C.J., Mironov, O.A., Whall, T.E., Landwehr, G.

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Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process von Avrov, D.D., Lebedev, Andrew O., Tairov, Yuri M., Dorozhkin, Sergey I., Rastegaev, V.P.

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Optically Transparent 6H-Silicon Carbide von Bakin, Andrey, Zubrilov, A.S., Kuznetsov, N.I., Tairov, Yuri M., Dorozhkin, Sergey I.

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Magnetocapacitance study of the fractional-quantum-Hall effect: Quasiparticle charge and spin polarization von Dorozhkin, S.I, Dorokhova, M.O, Haug, R.J, Ploog, K

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Surface processing of silicon carbide substrates von Bakin, A.S., Dorozhkin, S.L, Bogachov, S.V., Kazak-Kazakevich, A.Z., Lyutetskaja, I.G., Sazanov, A.P.

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