Light guiding in oxidised porous silicon optical waveguides von Maiello, Gabriella, La Monica, S, Ferrari, A, Masini, G, Bondarenko, V.P, Dorofeev, A.M, Kazuchits, N.M

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Simultaneous changes in the photoluminescence, infrared absorption and morphology of porous silicon during etching by HF von Gorbach, T Ya, Rudko, G Yu, Smertenko, P S, Svechnikov, S V, Valakh, M Ya, Bondarenko, V P, Dorofeev, A M

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Time-resolved spectroscopy of visibly emitting porous silicon von Gaponenko, S. V., Germanenko, I. N., Petrov, E. P., Stupak, A. P., Bondarenko, V. P., Dorofeev, A. M.

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Total gamma dose characteristics of CMOS devices in SOI structures based on oxidized porous silicon von Bondarenko, V.P., Bogatirev, Y.V., Colinge, J.P., Dolgyi, L.N., Dorofeev, A.M., Yakovtseva, V.A.

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Photoluminescence of Anodically Oxidized Porous Silicon von Filippov, V. V., Pershukevich, P. P., Bondarenko, V. P., Dorofeev, A. M.

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Erbium luminescence in porous silicon doped from spin-on films von Dorofeev, A. M., Gaponenko, N. V., Bondarenko, V. P., Bachilo, E. E., Kazuchits, N. M., Leshok, A. A., Troyanova, G. N., Vorosov, N. N., Borisenko, V. E., Gnaser, H., Bock, W., Becker, P., Oechsner, H.

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The tangent approach to the characterization of the set of singular boundary points for an arbitrary function von Dorofeev, M. A.

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Photoluminescence and Excitation Spectra of Porous Silicon Subjected to Long-Time Air Impregnation von Bondarenko, V. P., Dorofeev, A. M., Filippov, V. V., Labunov, V. A., Pershukevich, P. P.

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Deformation of porous silicon lattice caused by absorption/desorption processes von CHELYADINSKY, A. R, DOROFEEV, A. M, FERRARI, A, KAZUCHITS, N. M, MONICA, S. L, LAZAROUK, S. K, MAIELLO, G, MASINI, G, PENINA, N. M, STELMAKH, V. F, BONDARENKO, V. P

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High-Temperature Treatment of Porous Silicon von Labunov, V. A., Bondarenko, V. P., Borisenko, V. E., Dorofeev, A. M.

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Spectral characteristics of visible light emission from porous Si: Quantum confinement or impurity effect? von Bondarenko, V. P., Borisenko, V. E., Dorofeev, A. M., Germanenko, I. N., Gaponenko, S. V.

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Ionoluminescence of porous silicon von Z̊uk, J., Kuduk, R., Kulik, M., Liśkiewicz, J., Ma̧czka, D., Zhukovski, P.V., Stelmakh, V.F., Bondarenko, V.P., Dorofeev, A.M.

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Optical waveguide based on oxidized porous silicon von Bondarenko, V.P., Dorofeev, A.M., Kazuchits, N.M.

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Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching von Gorbach, T. Ya, Svechnikov, S. V., Smertenko, P. S., Tul’chinskii, P. G., Bondarenko, A. V., Volchek, S. A., Dorofeev, A. M., Masini, G., Maiello, G., La Monica, S., Ferrari, A.

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Luminescence of erbium-doped porous silicon von Bondarenko, V. P., Vorozov, N. N., Dolgii, L. N., Dorofeev, A. M., Kazyuchits, N. M., Leshok, A. A., Troyanova, G. N.

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Improving the accuracy of sections made of special steels von Zhadan, V. T., Berkovskii, V. S., Cherednikov, V. A., Kornev, M. A., Dorofeev, A. M.

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Improved rolling practice on the 260 semicontinuous rod mill von Zhadan, V. T., Berkovskii, V. S., Cherednikov, V. A., Terent'ev, S. G., Mitrofanov, I. G., Kornev, M. A., Dorofeev, A. M.

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Ionoluminescence of porous silicon: Light emission from silicon von ZUK, J, KUDUK, R, KULIK, M, LISKIEWICZ, J, MACZKA, D, ZHUKOVSKI, P. V, STELMAKH, V. F, BONDARENKO, V. P, DOROFEEV, A. M

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Comment on “Pore Size Distribution in Porous Silicon Studied by Adsorption Isotherms” [J. Electrochem. Soc., 130, 1161] von Bondarenko, V. P., Dorofeev, A. M., Tabulina, L. V.

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X-ray double-crystal diffraction study of homoepitaxial structures formed on porous silicon von Labunov, Y. A., Bondarenko, V. P., Glinenko, L. K., Dorofeev, A. M.

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