Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge von Igumbor, E., Dongho-Nguimdo, G. M., Mapasha, R. E., Meyer, W. E.

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Structural stability and electronic properties of AgInS2 under pressure von Dongho Nguimdo, G. M., Manyali, George S., Abdusalam, Mahmud, Joubert, Daniel P.

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A density functional (PBE, PBEsol, HSE06) study of the structural, electronic and optical properties of the ternary compounds AgAlX2 (X = S, Se, Te) von Dongho Nguimdo, G. M., Joubert, Daniel P.

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Structural stability, electronic, optical and lattice thermal conductivity properties of bulk and monolayer PtS_2 von Mohammed, Hamza A H, Dongho-Nguimdo, GM, Joubert, Daniel P

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Comprehensive first-principles study of bulk, bilayer, and monolayer α-PtO2 properties von Mohammed, Hamza A.H., Dongho-Nguimdo, G.M., Joubert, Daniel P.

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Electronic properties and defect levels induced by n/p-type defect-complexes in Ge von Igumbor, E., Olaniyan, O., Dongho-Nguimdo, G.M., Mapasha, R.E., Ahmad, S., Omotoso, E., Meyer, W.E.

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Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC von Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E., Omotoso, E., Meyer, W.E.

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First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In, Al; X=S, Se, Te) von Dongho-Nguimdo, G.M., Igumbor, Emmanuel, Zambou, Serges, Joubert, Daniel P.

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First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te) von Dongho-Nguimdo, G M, Igumbor, Emanuel, Zambou, Serges, Joubert, Daniel P

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