Advanced DC-SF Cell Technology for 3-D NAND Flash von Aritome, S., Yoohyun Noh, Hyunseung Yoo, Eun Seok Choi, Han Soo Joo, Youngsoo Ahn, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Sungjoo Hong, Sungwook Park, Kikkawa, T.

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A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory von Yoohyun Noh, Youngsoo Ahn, Hyunseung Yoo, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Aritome, S., Sungjoo Hong, Sungwook Park

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Polarization Switching Anomaly near the Morphotropic Phase Boundary in Pb(Zr 1- x Ti x )O 3 Ferroelectric Thin Films von Sheen, Dongsun, Kim, Jong-Jean

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POLARIZATION SWITCHING ANOMALY NEAR THE MORPHOTROPIC PHASE BOUNDARY IN Pb(Zr1-xTix)O3 FERROELECTRIC THIN FILMS von Sheen, D, Kim, J-J

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CVD-cobalt for low resistance word line electrode of 3D NAND flash memory von MinSoo Kim, SungJin Whang, YoungJin Lee, JooHee Han, JinHae Choi, ByoungHo Lee, DongSun Sheen, SeungHo Pyi, JinWoong Kim

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Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4∕O2∕NF3 chemistry von Kim, Jae-Hong, Chung, Chai-O, Sheen, Dongsun, Sohn, Yong-Sun, Sohn, Hyun-Chul, Kim, Jin-Woong, Park, Sung-Wook

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Dielectric and polarization switching anomalies near the morphotropic phase boundary in P b ( Z r 1 − x Ti x ) O 3 ferroelectric thin films von Sheen, Dongsun, Kim, Jong-Jean

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