Higher hole mobility induced by twisted Direct Silicon Bonding (DSB) von Hamaguchi, M., Yin, H., Saenger, K.L., Sung, C.Y., Hasumi, R., Iijima, R., Ohuchi, K., Takasu, Y., Ott, J.A., Kang, H., Biscardi, M., Li, J., Domenicucci, A.G., Zhu, Z., Ronsheim, P., Zhang, R., Rovedo, N., Utomo, H., Fogel, K., de Souza, J.P., Sadana, D.K., Takayanagi, M., Park, D., Shahidi, G., Ishimaru, K.

Volltext

Development of stacking faults in strained silicon layers von Bedell, S.W., Reznicek, A., Yang, B., Hovel, H.J., Ott, J.A., Fogel, K., Domenicucci, A.G., Sadana, D.K.

Volltext