SPECTRAL DISTRIBUTION OF SPONTANEOUS ELECTROLUMINESCENCE IN GREEN LIGHT EMITTING DIODES AT DIFFERENT EXCITATION LEVELS von D. S. Bobuchenko, D. S. Domanevskii, I. A. Khorunzhii, Yu. V. Trofimov, V. I. Tsvirko, R. D. Kakanakov

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Free electron recombination in degenerately doped and moderately compensated gallium arsenide von Arnaudov, B G, Domanevskii, D S, Isusov, A M, Gardev, P L, Evtimova, S K

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Burstein-Moss effect and near-band-edge luminescence spectrum of highly doped indium arsenide von Vilkotskii, V. A., Domanevskii, D. S., Kakanakov, R. D., Krasovskii, V. V., Tkachev, V. D.

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Hopping conductivity in heavily doped strongly compensated GaAs von Arnaudov, B. G., Domanevskii, D. S., Yanchev, I. Y.

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The valence band tail state filling in heavily doped and compensated crystals of gallium arsenide von Domanevskii, D. S., Zhokhovets, S. V., Prokopenya, M. V.

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The origin of the minority impurity states in heavily doped semiconductors von Domanevskii, D. S., Krasovskii, V. V., Prokopenya, M. V., Vilkotskii, V. A., Zhokhovets, S. V.

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Peculiarities of radiative recombination in gallium arsenide doped with shallow donors and acceptors von Domanevskii, D. S., Zhokhovets, S. V., Pkokopenya, M. V.

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Electroreflectance Depth Profiling and Hall Measurements of Thermally Converted GaAs Layers von Röppischer, H., Goldhahn, R., Bumai, J. A., Domanevskii, D. S.

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Near-band-edge luminescence in heavily doped gallium arsenide von Arnaudov, B G, Domanevskii, D S, Evtimova, S K, Zhohovetz, S V, Prokopenja, M V

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Room-Temperature Electroreflectance and Reflectance of a GaAs∕AlGaAs Single Quantum Well Structure von Herasimovich, A. A.

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Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers von Arnaudov, B., Domanevskii, D.S., Evtimova, S., Ivanov, Ch, Kakanakov, R.

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Effect of pulsed laser processing on phase composition and properties of surface layers of yttrium ceramic von Esepkin, V. A., Ul'yashin, A. G., Gorol'chuk, I. G., Bumai, Yu. A., Domanevskii, D. S., Malakhovskaya, V. ., Bliznyuk, N. V., Dergai, A. M., Kamenev, A. Ya, Batishche, S. A., Tatur, G. A., Kuz'muk, A. A., Kovalev, L. D.

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Low-Energy Recombination Radiation of p-n Junctions in GaAs von Lomako, V. M., Tkachev, V. D., Domanevskii, D. S.

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Electroluminescence and Cathodoluminescence of p-n Junctions in GaAs von Lomako, V. M., Domanevskii, D. S., Tkachev, V. D.

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The valence band tail state filling in heavily doped and compensated crystals of gallium arsenide von Domanevskii, D. S., Zhokhovets, S. V., Prokopenya, M. V.

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Peculiarities of radiative recombination in gallium arsenide doped with shallow donors and acceptors von Domanevskii, D. S., Zhokhovets, S. V., Pkokopenya, M. V.

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Electroreflectance Depth Profiling and Hall Measurements of Thermally Converted GaAs Layers von Röppischer, H., Goldhahn, R., Bumai, J. A., Domanevskii, D. S.

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