Diffraction microscopy using 20kV electron beam for multiwall carbon nanotubes von Kamimura, Osamu, Kawahara, Kota, Doi, Takahisa, Dobashi, Takashi, Abe, Takashi, Gohara, Kazutoshi

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Diffraction microscopy using 20 kV electron beam for multiwall carbon nanotubes von Kamimura, Osamu, Doi, Takahisa, Dobashi, Takashi, Kawahara, Kota, Abe, Takashi, Gohara, Kazutoshi

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High-temperature MBE growth of Si-Direct current heating effects on (111) and (001) vicinal surfaces von STOYANOV, S. S, ICHIKAWA, M, DOI, T

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Formation of double-monolayer-height islands on a Si(001) surface by alternating current heating in molecular beam epitaxy von Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki, Kakibayashi, Hiroshi

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The driving force of Si adsorbate transfer on a Si(001) surface von Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki

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Diffraction microscopy using 20 kV electron beam for multiwallcarbon nanotubes von Kamimura, Osamu, Kawahara, Kota, Doi, Takahisa, Dobashi, Takashi, Abe, Takashi, Gohara, Kazutoshi

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Anisotropic diffusion of Si adsorbates on a Si(001) surface von DOI, T, ICHIKAWA, M

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Observation of Si(001) surface domains in absorption current images of an electron microscope von DOI, T, ICHIKAWA, M, HOSOKI, S

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Observation of Si(111) and gold-deposited Si(111) surfaces using micro-probe reflection high-energy electron diffraction von Ichikawa, Masakazu, Doi, Takahisa, Hayakawa, Kazunobu

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Observation of 1-nm-high structures on a Si(001) surface using a differential interference optical microscope von DOI, T, ISHIZAKA, A, ICHIKAWA, M, HOSOKI, S, NINOMIYA, K

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Observation of surface micro-structures by micro-probe reflection high-energy electron diffraction von ICHIKAWA, M, DOI, T, ICHIHASHI, M, HAYAKAWA, K

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Fourth power law of time dependence of Si adsorbate diffusion on a Si(001) surface von Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki

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STM modification of MoS 2 in the nanometer-scale using a gas—solid reaction von Kohno, Makiko, Doi, Takahisa, Hasegawa, Tsuyoshi, Tomimatsu, Satoshi, Hosoki, Shigeyuki

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Observation of Si(111) surface steps from scanning microscope images of the sample absorption current von Doi, Takahisa, Nakahara, Hitoshi, Ichikawa, Masakazu, Hosoki, Shigeyuki

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STM modification of MoS2 in the nanometer-scale using a gas—solid reaction von Kohno, Makiko, Doi, Takahisa, Hasegawa, Tsuyoshi, Tomimatsu, Satoshi, Hosoki, Shigeyuki

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Surface migration of Si atoms based on the kinetics of a Si microcluster on a Si(001) surface von Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki, Ninomiya, Ken

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JPH0630236B von ICHIKAWA MASAKAZU, DOI TAKAHISA

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SCANNING TYPE REFLECTING ELECTRON DIFFRACTION MICROSCOPE DEVICE von ICHIKAWA MASAKAZU, DOI TAKAHISA

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SCANNING ELECTRON REFLECTION DIFRACTION MICROSCOPIC DEVICE von ICHIKAWA MASAKAZU, DOI TAKAHISA

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MAGNETO-OPTICAL DISK AND MEMORY DEVICE USING THE SAME von TOMIMATSU SATOSHI, HASEGAWA TAKESHI, HOSOKI SHIGEYUKI, DOI TAKAHISA

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