InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer von LEW, K. L, YOON, S. F, TANOTO, H, CHEN, K. P, DOHRMAN, C. L, ISAACSON, D. M, FITZGERALD, E. A

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Fabrication of Silicon on Lattice-Engineered Substrate (SOLES) as a Platform for Monolithic Integration of CMOS and Optoelectronic Devices von Dohrman, C.L., Chilukuri, K., Isaacson, D.M., Lee, M.L., Fitzgerald, E.A.

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Dislocation engineering in strained mos materials von Fitzgerald, E.A., Lee, M.L., Yu, B., Lee, K.E., Dohrman, C.L., Isaacson, D., Langdo, T.A., Antoniadis, D.A.

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