Treffer 1 - 4 von 4 für Suche 'Doekme, Ilbilge', Suchdauer: 0,41s Treffer weiter einschränken
  1. 1
    The analysis of I– V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height

    The analysis of I– V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height von Doekme, Ilbilge


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  2. 2
    The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices

    The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices von DOKME, Ilbilge, TUNC, T, USL, I, ALTMDAL, S

    Veröffentlicht in Synthetic metals

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  3. 3
    Temperature dependent current–voltage ( I– V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

    Temperature dependent current–voltage ( I– V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer von Tunç, Tuncay, Altindal, Şemsettin, Uslu, İbrahim, Dökme, İlbilge, Uslu, Habibe


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  4. 4
    Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

    Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures von Tunç, Tuncay, Altındal, Şemsettin, Dökme, İlbilge, Uslu, Habibe

    Veröffentlicht in Journal of electronic materials

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