Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars von Xia, R., Larkins, E.C., Harrison, I., Dods, S.R.A., Andrianov, A., Morgan, J., Landesman, J.P.

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The effect of mounting-induced strain and defect on the properties of AlGaAs 808 nm LDs von Xia, R, Larkins, E.C, Harrison, I, Dods, S.R.A, Andrianov, A.V, Morgan, J, Landesman, J.P

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Spectrally resolved electroluminescence microscopy and μ-electroluminescence investigation of GaN-based LEDs von Xia, R., Xu, H., Harrison, I., Beaument, B., Andrianov, A., Dods, S.R.A., Morgan, J.M., Larkins, E.C.

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Spatial inhomogeneity investigation of QW emission in InGaN MQW LEDs von Xia, R, Harrison, I, Larkins, E.C, Andrianov, A.V, Dods, S.R.A, Morgan, J, Parbrook, P.J, Button, C.C, Hill, G

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Q-modulation of a surface emitting laser and an integrated detuned cavity von Dods, S.R.A., Ogura, M.

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Small-signal analysis of semiconductor lasers modulated at frequencies on the order of the beat frequency von Dods, S.R.A., Ogura, M., Watanabe, M.

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Examples of reconstruction of vibrating rods from spectral data von Gladwell, G.M.L., Dods, S.R.A.

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A Highly Integrated System for Fast, Flexible and Comprehensive Characterisation of Semiconductor Lasers von Larkins, E.C., Dods, S.R.A., Andrianov, A.V., Morgan, J., Harrison, I., Benson, T.M., Orton, J.W.

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Low frequency electrical noise characteristics of broad area 808 nm semiconductor laser diodes von Morgan, J., Harrison, I., Dods, S.R.A., Andrianov, A.V., Orton, J.W., Larkins, E.C., Nagle, J., Asonen, H., Nappi, J., Esquivias, I., Arias, J.

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Photoluminescence microscopy of mirror facets of broad area laser diodes von Andrianov, A.V., Dods, S.R.A., Morgan, J., Orton, J.W., Harrison, I., Larkins, E.C., Daiminger, F.X., Vassilakis, E., Hirtz, J.P.

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Nonuniform transmission-line synthesis using inverse eigenvalue analysis von Gladwell, G.M.L., Dods, S.R.A., Chaudhuri, S.K.

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