Response of 5-nm Bulk FinFET SRAMs to Extreme Ionizing and Non-ionizing Doses von Xiong, Yoni, Pieper, Nicholas J., Dodds, Nathaniel A., Vizkelethy, Gyorgy, Nowlin, R. Nathan, Bhuva, Bharat L.

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The Effects of Threshold Voltage and Number of Fins Per Transistor on the TID Response of GF 12LP Technology von Vidana, Aldo I., Dodds, Nathaniel A., Nowlin, R. Nathan, Wallace, Trace M., Oldiges, Phil J., Dodd, Brian M., Xiong, Jenny, Cadena, Rick M., Trippe, James, Kauppila, Jeffrey S., Massengill, Lloyd W., Barnaby, Hugh J.

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Contribution of Secondary Alpha Particles to Soft Error Rates in Space Systems von Cadena, Rick M., Warren, Kevin M., Dodds, Nathaniel A., Trippe, James M., Sierawski, Brian D., Ball, Dennis R., Reed, Robert A., Schrimpf, Ronald D.

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Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage von Goley, Patrick S., Dodds, Nathaniel A., Frounchi, Milad, Tzintzarov, George N., Nowlin, R. Nathan, Cressler, John D.

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Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation von Teng, Jeffrey W., Nergui, Delgermaa, Parameswaran, Hari, Sepulveda-Ramos, Nelson E., Tzintzarov, George N., Mensah, Yaw, Cheon, Clifford D., Rao, Sunil G., Ringel, Brett, Gorchichko, Mariia, Li, Kan, Ying, Hanbin, Ildefonso, Adrian, Dodds, Nathaniel A., Nowlin, R. Nathan, Zhang, En Xia, Fleetwood, Daniel M., Cressler, John D.

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Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure von Wang, Peng, Sternberg, Andrew L., Sierawski, Brian D., Zhang, En Xia, Warren, Kevin M., Tonigan, Andrew M., Brewer, Rachel M., Dodds, Nathaniel A., Vizkelethy, Gyorgy, Jordan, Scott L., Fleetwood, Daniel M., Reed, Robert A., Schrimpf, Ronald D.

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Analysis of TPA Pulsed-Laser-Induced Single-Event Latchup Sensitive-Area von Wang, Peng, Sternberg, Andrew L., Kozub, John A., Zhang, En Xia, Dodds, Nathaniel A., Jordan, Scott L., Fleetwood, Daniel M., Reed, Robert A., Schrimpf, Ronald D.

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Criticality of Low-Energy Protons in Single-Event Effects Testing of Highly-Scaled Technologies von Pellish, Jonathan A., Marshall, Paul W., Rodbell, Kenneth P., Gordon, Michael S., LaBel, Kenneth A., Schwank, James R., Dodds, Nathaniel A., Castaneda, Carlos M., Berg, Melanie D., Kim, Hak S., Phan, Anthony M., Seidleck, Christina M.

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The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets von Clemens, M. A., Sierawski, B. D., Warren, K. M., Mendenhall, M. H., Dodds, N. A., Weller, R. A., Reed, R. A., Dodd, P. E., Shaneyfelt, M. R., Schwank, J. R., Wender, S. A., Baumann, R. C.

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The Impact of Metal Line Reflections on Through-Wafer TPA SEE Testing von Khachatrian, Ani, Roche, Nicolas J.-H, Dodds, Nathaniel A., McMorrow, Dale, Warner, Jeffrey H., Buchner, Stephen P., Reed, Robert A.

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The Effect of High-Z Materials on Proton-Induced Charge Collection von Clemens, M A, Hooten, N C, Ramachandran, V, Dodds, N A, Weller, R A, Mendenhall, M H, Reed, R A, Dodd, P E, Shaneyfelt, M R, Schwank, J R, Blackmore, E W

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Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology von Gadlage, M J, Ahlbin, J R, Bhuva, B L, Hooten, N C, Dodds, N A, Reed, R A, Massengill, L W, Schrimpf, R D, Vizkelethy, G

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Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16-300 K von Marshall, Cheryl J, Marshall, Paul W, Ladbury, Raymond L, Waczynski, Augustyn, Arora, Rajan, Foltz, Roger D, Cressler, John D, Kahle, Duncan M, Dakai Chen, Delo, Gregory S, Dodds, Nathaniel A, Pellish, Jonathan A, Kan, Emily, Boehm, Nicholas, Reed, R A, LaBel, Kenneth A

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Study of Multi-Cell Upsets in SRAM at a 5-nm Bulk FinFET Node von Pieper, Nicholas J., Xiong, Yoni, Feeley, Alexandra, Pasternak, John, Dodds, Nathaniel, Ball, D. R., Bhuva, Bharat L.

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High Energy Electron-Induced Transients In a Shielded Focal Plane Array von Auden, E C, Weller, R A, Mendenhall, M H, Reed, R A, Schrimpf, R D, King, M P, Dodds, N A, Arpin, L A, Asai, M

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The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology von Vidana, Aldo, Dodds, Nathaniel Anson, Nowlin, Robert Nathaniel, Wallace, Trace Michael, Oldiges, Philip Joseph, Dodd, Brian M., Xiong, Jenny, Cadena, Rick M., Trippe, James, Kauppila, Jeffrey S., Massengill, Lloyd W., Barnaby, Hugh J.

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Study of Multicell Upsets in SRAM at a 5-nm Bulk FinFET Node von Pieper, Nicholas J., Xiong, Yoni, Feeley, Alexandra, Pasternak, John, Dodds, Nathaniel, Ball, D. R., Bhuva, Bharat L.

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The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate von Dodds, N. A., Martinez, M. J., Dodd, P. E., Shaneyfelt, M. R., Sexton, F. W., Black, J. D., Lee, D. S., Swanson, S. E., Bhuva, B. L., Warren, K. M., Reed, R. A., Trippe, J., Sierawski, B. D., Weller, R. A., Mahatme, N., Gaspard, N. J., Assis, T., Austin, R., Weeden-Wright, S. L., Massengill, L. W., Swift, G., Wirthlin, M., Cannon, M., Liu, R., Chen, L., Kelly, A. T., Marshall, P. W., Trinczek, M., Blackmore, E. W., Wen, S.-J, Wong, R., Narasimham, B., Pellish, J. A., Puchner, H.

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Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation von Teng, Jeffrey W., Nergui, Delgermaa, Parameswaran, Hari, Sepulveda-Ramos, Nelson E., Tzintzarov, George N., Mensah, Yaw, Cheon, Clifford D., Rao, Sunil G., Ringel, Brett, Gorchichko, Mariia, Li, Kan, Ying, Hanbin, Ildefonso, Adrian, Dodds, Nathaniel A., Nathan Nowlin, R., Zhang, En Xia, Fleetwood, Daniel M., Cressler, John D.

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Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam von Dodds, N. A., Schwank, J. R., Shaneyfelt, M. R., Dodd, P. E., Doyle, B. L., Trinczek, M., Blackmore, E. W., Rodbell, K. P., Gordon, M. S., Reed, R. A., Pellish, J. A., LaBel, K. A., Marshall, P. W., Swanson, S. E., Vizkelethy, G., Van Deusen, S., Sexton, F. W., Martinez, M. J.

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