The variation of the pressure coefficient of manganin sensors at low temperatures von Dmowski, L H, Litwin-Staszewska, E

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Direct evidence of the two-electron character of DX centers based on co-doping with shallow donors and application of high pressure von Baj, M., Dmowski, L.H.

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Blue Laser on High N 2 Pressure-Grown Bulk GaN von Grzegory, I., Boćkowski, M., Krukowski, S., Łucznik, B., Wróblewski, M., Weyher, J.L., Leszczyński, M., Prystawko, P., Czernecki, R., Lehnert, J., Nowak, G., Perlin, P., Teisseyre, H., Purgał, W., Krupczyński, W., Suski, T., Dmowski, L.H., Litwin-Staszewska, E., Skierbiszewski, C., Łepkowski, S., Porowski, S.

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Photoionization of Ge¯-DX State in GaAs von Piotrzkowski, R., Dmowski, L.H.

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Far-Infrared Narrow-Band Photodetector Based on Magnetically Tunable Cyclotron Resonance-Assisted Transitions in Pure n-Type InSb von Dmowski, L.H., Cheremisin, M., Skierbiszewski, C., Knap, W.

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Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs von Wasik, Dariusz, Dmowski, L.H., Słupiński, T., Baj, M.

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Correlations of the remote impurity charges—A method of 2DEG mobility tuning in GaAs/AlGaAs heterostructures von Suski, T., Wiśniewski, P., Dmowski, L.H., Gorczyca, I., Smoliner, J., Gornik, E., Böhm, G., Weimann, G.

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Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures von Gorczyca, I., Smoliner, J., Gornik, E., Weimann, G., Suski, T., Sobkowicz, P., Böhm, G., Dmowski, L.H., Wiśniewski, P.

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Pressure Investigation of Tunneling in an InAlAs-InGaAs Double Barrier Structure von Cury, L.A., Dmowski, L.H., Celeste, A., Portal, J.C., Davies, M., Heath, M., Sivco, D.L., Cho, A.Y.

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