Luminescence of SiO2 layers on silicon at various types of excitation von Baraban, A.P., Samarin, S.N., Prokofiev, V.A., Dmitriev, V.A., Selivanov, A.A., Petrov, Y.

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The Mg2NiH4 film on nickel substrate: synthesis, properties and kinetics of formation von Baraban, A.P., Chernov, I.A., Dmitriev, V.A., Elets, D.I., Gabis, I.E., Kuznetsov, V.G., Voyt, A.P.

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Theoretical investigation of compact microstrip resonators with stubs for patch antennas von Dmitriev, V.A., Costa, J.C.W.A.

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SURFACE QUALITY AND DURABILITY OF BEARINGS AFTER SHOT BLASTING von Dmitriev, V.A.

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DEFINITION OF RESIDUAL STRESSES IN RINGS OF BEARINGS WITH AN ARBITRARY CROSS-SECTION von Dmitriev, V.A.

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The Ethnographic Department of The Russian Museum in the Complex of Academic Interests of A. A. Miller, a Paleo-ethnologist and a Museum Employee von Dmitriev, V.A.

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Luminescence of degraded Si-Si[O.sub.2] structures von Baraban, A.P, Dmitriev, V.A, Gadzhala, A.A

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Luminescent properties of aluminum hydride von Baraban, A.P., Gabis, I.E., Dmitriev, V.A., Dobrotvorskii, M.A., Kuznetsov, V.G., Matveeva, O.P., Titov, S.A., Voyt, A.P., Elets, D.I.

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Silicon carbide and SiC-AIN solid-solution p-n structures grown by liquid-phase epitaxy von Dmitriev, V.A.

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Specific features of the field generation of minority charge carriers in Si-Si[O.sub.2] structures von Baraban, A.P, Konorov, P.P, Dmitriev, V.A, Prokofev, V.A

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Diagnostics of γ-irradiated Si-Si[O.sub.2] structures by the cathodoluminescence method von Baraban, A.P, Dmitriev, V.A, Petrov, Yu. V, Timofeeva, K.A

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Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates von Polyakov, A.Y., Govorkov, A.V., Smirnov, N.B., Nikolaev, A.E., Nikitina, I.P., Dmitriev, V.A.

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Electron-excited luminescence of Si[O.sub.2] layers on silicon von Baraban, A.P, Dmitriev, V.A, Petrov, Yu. V, Timofeeva, K.A

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Structural and electrical properties of Schottky barriers on n-GaN von Kalinina, E.V., Kuznetsov, N.I., Babanin, A.I., Dmitriev, V.A., Shchukarev, A.V.

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Computer simulation and experimental study of transient processes in a single-phase voltage transformer von Kruzhaev, A. V., Elagin, I. A., Pavleino, M. A., Dmitriev, V. A., Chaly, A. M.

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Electrical characteristics of GaN/6H-SiC n-p heterojunctions von Kuznetsov, N.I., Gubenco, A.E., Nikolaev, A.E., Melnik, Yu.V., Blashenkov, M.N., Nikitina, I.P., Dmitriev, V.A.

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Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE von Ledyaev, O.Yu, Cherenkov, A.E., Nikolaev, A.E., Nikitina, I.P., Kuznetsov, N.I., Dunaevski, M.S., Titkov, A.N., Dmitriev, V.A.

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The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates von Cheng, T.S., Novikov, S.V., Lebedev, V.B., Campion, R.P., Jeffs, N.J., Melnik, Yu.V., Tsvetkov, D.V., Stepanov, S.I., Cherenkov, A.E., Dmitriev, V.A., Korakakis, D., Hughes, O.H., Foxon, C.T.

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Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions von Kalinina, E.V., Kholujanov, G.F., Zubrilov, A.S., Tsvetkov, D.V., Vatnik, M.P., Soloviev, V.A., Tretjakov, V.D., Kong, H., Dmitriev, V.A.

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Trapped-Mode Resonance Regime of Thin Microwave Electromagnetic Arrays with Two Concentric Rings in Unit Cell von Kawakatsu, M. N., Dmitriev, V. A.

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