Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy von Chiu, T.H., Cunningham, J.E., Ditzenberger, J.A., Jan, W.Y., Chu, S.N.G.

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Very high purity GaAs grown by gas source molecular beam epitaxy von Cunningham, J.E., Timp, G., Chiu, T.H., Ditzenberger, J.A., Tsang, W.T., Sergent, A.M., Lang, D.V.

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Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beam von Tsang, W.T., Ditzenberger, J.A., Olsson, N.A.

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Resistivity changes in silicon single crystals induced by heat treatment von Fuller, C.S., Ditzenberger, J.A., Hannay, N.B., Buehler, E.

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Improvement of photoluminescence of molecular beam epitaxially grown Ga x Al y In 1-x-y As by using an As 2 molecular beam von Tsang, W.T., Ditzenberger, J.A., Olsson, N.A.

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Growth and diffusion study of carbon doped GaAs superlattice grown by chemical beam epitaxy von Chiu, T.H., Cunningham, J.E., Ditzenberger, J.A., Jan, W.Y.

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A visible (AlGa)As heterostructure laser grown by molecular beam epitaxy von Tsang, W. T., Ditzenberger, J. A.

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Infrared lattice vibrations in CoF 2 von Barker, A.S., Ditzenberger, J.A.

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Multilongitudinal mode operation in angled stripe buried heterostructure lasers von TSANG, W. T, LOGAN, R. A, DITZENBERGER, J. A

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Diffusion of Donor and Acceptor Elements in Silicon von Fuller, C. S., Ditzenberger, J. A.

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Infrared lattice vibrations in CoF2 von Barker, A.S., Ditzenberger, J.A.

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