Edge-emitting polariton laser and amplifier based on a ZnO waveguide von Jamadi, O., Reveret, F., Disseix, P., Medard, F., Leymarie, J., Moreau, A., Solnyshkov, D., Deparis, C., Leroux, M., Cambril, E., Bouchoule, S., Zuniga-Perez, J., Malpuech, G.

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Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers von Zuniga-Perez, J., Mallet, E., Hahe, R., Rashid, M. J., Bouchoule, S., Brimont, C., Disseix, P., Duboz, J. Y., Gommé, G., Guillet, T., Jamadi, O., Lafosse, X., Leroux, M., Leymarie, J., Li, Feng, Réveret, F., Semond, F.

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Fabrication and characterization of a room-temperature ZnO polariton laser von Li, Feng, Orosz, L., Kamoun, O., Bouchoule, S., Brimont, C., Disseix, P., Guillet, T., Lafosse, X., Leroux, M., Leymarie, J., Malpuech, G., Mexis, M., Mihailovic, M., Patriarche, G., Réveret, F., Solnyshkov, D., Zuniga-Perez, J.

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MOVPE grown periodic AlN/BAlN heterostructure with high boron content von Li, X., Sundaram, S., El Gmili, Y., Genty, F., Bouchoule, S., Patriache, G., Disseix, P., Réveret, F., Leymarie, J., Salvestrini, J.-P., Dupuis, R.D., Voss, P.L., Ougazzaden, A.

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AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm von Li, X., Sundaram, S., Disseix, P., Le Gac, G., Bouchoule, S., Patriarche, G., Réveret, F., Leymarie, J., El Gmili, Y., Moudakir, T., Genty, F., Salvestrini, J-P., Dupuis, R. D., Voss, P. L., Ougazzaden, A.

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High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx von Réveret, F., Bignet, L., Zhigang, W., Lafosse, X., Patriarche, G., Disseix, P., Médard, F., Mihailovic, M., Leymarie, J., Zúñiga-Pérez, J., Bouchoule, S.

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Delay and distortion of slow light pulses by excitons in ZnO von Shubina, T V, Glazov, M M, Gippius, N A, Toropov, A A, Lagarde, D, Disseix, P, Leymarie, J, Gil, B, Pozina, Galia, Bergman, J Peder, Monemar, Bo

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Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm von Li, X, Le Gac, G, Bouchoule, S, El Gmili, Y, Patriarche, G, Sundaram, S, Disseix, P, Reveret, F, Leymarie, J, Streque, J, Genty, F, Salvestrini, J-P, Dupuis, R D, Li, X-H, Voss, P L, Ougazzaden, A

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Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates von Antoine-Vincent, N., Natali, F., Mihailovic, M., Vasson, A., Leymarie, J., Disseix, P., Byrne, D., Semond, F., Massies, J.

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Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature von Faure, S., Brimont, C., Guillet, T., Bretagnon, T., Gil, B., Médard, F., Lagarde, D., Disseix, P., Leymarie, J., Zúñiga-Pérez, J., Leroux, M., Frayssinet, E., Moreno, J. C., Semond, F., Bouchoule, S.

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Optical and excitonic properties of ZnO films von Mihailovic, M., Henneghien, A.-L., Faure, S., Disseix, P., Leymarie, J., Vasson, A., Buell, D.A., Semond, F., Morhain, C., Zùñiga Pérez, J.

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Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon von Semond, F., Sellers, I. R., Natali, F., Byrne, D., Leroux, M., Massies, J., Ollier, N., Leymarie, J., Disseix, P., Vasson, A.

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Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities von Médard, F., Lagarde, D., Zúñiga-Pérez, J., Disseix, P., Mihailovic, M., Leymarie, J., Frayssinet, E., Moreno, J. C., Semond, F., Leroux, M., Bouchoule, S.

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Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms von Réveret, F., Disseix, P., Leymarie, J., Vasson, A., Semond, F., Leroux, M., Massies, J.

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Toward polariton lasing in a zinc oxide microcavity: Design and preliminary results von Médard, F, Lagarde, D, Zúñiga-Pérez, J, Disseix, P, Leymarie, J, Mihailovic, M, Solnyshkov, D D, Malpuech, G, Frayssinet, E, Sergent, S, Semond, F, Leroux, M, Bouchoule, S

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Optical investigations of bulk and multi-quantum well nitride-based microcavities von Réveret, F., Médard, F., Disseix, P., Leymarie, J., Mihailovic, M., Vasson, A., Sellers, I.R., Semond, F., Leroux, M., Massies, J.

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Evidence of excitonic transitions by angle-resolved reflectivity for the determination of oscillator strengths in GaN/(Al,Ga)N quantum wells von Rakotonanahary, G., Aberra Guebrou, S., Lagarde, D., Natali, F., Reveret, F., Disseix, P., Leymarie, J., Leroux, M., Massies, J.

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Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities von Médard, F., Zúñiga-Perez, J., Frayssinet, E., Moreno, J.C., Semond, F., Faure, S., Disseix, P., Leymarie, J., Mihailovic, M., Vasson, A., Guillet, T., Leroux, M.

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Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature von Sellers, I. R., Semond, F., Leroux, M., Massies, J., Henneghien, A-L., Disseix, P., Leymarie, J., Vasson, A.

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From evidence of strong light-matter coupling to polariton emission in GaN microcavities von Sellers, I. R., Semond, F., Zamfirescu, M., Stokker-Cheregi, F., Disseix, P., Leroux, M., Leymarie, J., Gurioli, M., Vinattieri, A., Réveret, F., Malpuech, G., Vasson, A., Massies, J.

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