Investigation of the impact of the oxide thickness and RESET conditions on disturb in HfO2-RRAM integrated in a 65nm CMOS technology von Diokh, T., Le-Roux, E., Jeannot, S., Gros-Jean, M., Candelier, P., Nodin, J. F., Jousseaume, V., Perniola, L., Grampeix, H., Cabout, T., Jalaguier, E., Guillermet, M., De Salvo, B.

Volltext

Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs von Cabout, T., Perniola, L., Jousseaume, V., Grampeix, H., Nodin, J. F., Toffoli, A., Guillermet, M., Jalaguier, E., Vianello, E., Molas, G., Reimbold, G., De Salvo, B., Diokh, T., Candelier, P., Pirrotta, O., Padovani, A., Larcher, L., Bocquet, M., Muller, C.

Volltext

On the impact of the oxide thickness and reset conditions on activation energy of HfO2 based ReRAM extracted through disturb measurements von Diokh, T., Le-Roux, E., Jeannot, S., Candelier, P., Perniola, L., Nodin, J. F., Jousseaume, V., Cabout, T., Grampei, H., Jalaguier, E., De Salvo, B.

Volltext

Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design von Vianello, E., Thomas, O., Harrand, M., Onkaraiah, S., Cabout, T., Traore, B., Diokh, T., Oucheikh, H., Perniola, L., Molas, G., Blaise, P., Nodin, J. F., Jalaguier, E., De Salvo, B.

Volltext

HfO2-based RRAMS for integration on advanced CMOS technology nodes von Nodin, J. F., Vianello, E., Perniola, L., Cabout, T., Traore, B., Diokh, T., Grampeix, H., Molas, G., Jalaguier, E., De Salvo, B.

Volltext bestellen

Capacity-Building Through Digital Approaches: Evaluating the Feasibility and Effectiveness of eLearning to Introduce Subcutaneous DMPA Self-Injection in Senegal and Uganda von Wood, Siri, Roberts, Ericka, Stout, Aurora Anna, Kaboré, Alain, Namagembe, Allen, Cover, Jane, Ndiaye, Marème Dia, Diokh, Mouminatou, Sèye, Farmata, Balderston, Beth

Volltext

Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology von DIOKH, Therese, LE-ROUX, Elise, CARABASSE, Catherine, CANDELIER, Philippe, DE SALVO, Barbara, JEANNOT, Simon, CAGLI, Carlo, JOUSSEAUME, Vincent, NODIN, Jean-François, GROS-JEAN, Mickaël, GAUMER, Clement, MELLIER, Maxime, CLUZEL, Jacques

Volltext

Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology von Diokh, Therese, Le-Roux, Elise, Jeannot, Simon, Cagli, Carlo, Jousseaume, Vincent, Nodin, Jean-François, Gros-Jean, Mickaël, Gaumer, Clement, Mellier, Maxime, Cluzel, Jacques, Carabasse, Catherine, Candelier, Philippe, De Salvo, Barbara

Volltext

RERAM MEMORY CONTROL METHOD AND DEVICE von DIOKH THÉRÈSE ANDRÉE, LE ROUX ELISE, CANDELIER PHILIPPE, DAMIENS JOEL

Volltext bestellen

PROCEDE ET DISPOSITIF DE COMMANDE D'UNE MEMOIRE RERAM von DIOKH THERESE ANDREE, CANDELIER PHILIPPE, DAMIENS JOEL, LEROUX ELISE

Volltext bestellen