Spectroscopic ellipsometry : a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47-xAs layers on InP in the wavelength range 280-19... von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

Volltext

Refractive indices of InAlAs and InGaAs/InP from 250 to 1900 nm determined by spectroscopic ellipsometry von Dinges, H.W., Burkhard, H., Lösch, R., Nickel, H., Schlapp, W.

Volltext

An ellipsometric study of SiO 2/Si 3N 4 double layers on silicon produced by chemical vapour deposition von Dinges, H.W.

Volltext

Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In 0.52Al 0.48As and In 0.53Al xGa 0.47 - xAs on InP in the wavelength range from 28... von Dinges, H.W., Burkhard, H., Lösch, R., Nickel, H., Schlapp, W.

Volltext

Determination of refractive indices of In 0.53Al 0.40Ga 0.07As and In 0.53Al 0.11Ga 0.36As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry von Dinges, H.W., Burkhard, H., Lösch, R., Nickel, H., Schlapp, W.

Volltext

Determination of the refractive index of In 0.53Al 0.11Ga 0.36As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry von Dinges, H.W., Burkhard, H., Lösch, R., Nickel, H., Schlapp, W.

Volltext

Determination of refractive indexes of In 0.52Al 0.48As on InP in the wavelength range from 250 to 1900 nm by spectroscopic ellipsometry von Dinges, H.W., Burkhard, H., Lösch, R., Nickel, H., Schlapp, W.

Volltext

Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In 0.52Al 0.48As and In 0.53Al xGa 0.47− xAs layers on InP in the wavelength range 2... von Dinges, H.W., Burkhard, H., Lösch, R., Nickel, H., Schlapp, W.

Volltext

Spectroscopic ellipsometry : a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47-xAs on InP in the wavelength range from 280 to 1... von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

Volltext

Study of In0.53Ga0.47As/In0.52Al0.48As quantum wells on InP by spectroscopic ellipsometry and photoluminescence von DINGES, H. W, HILLMER, H, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

Volltext

Determination of refractive indices of In0.53Al0.40Ga0.07As and In0.53Al0.11Ga0.36As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

Volltext

Study of In 0.53Ga 0.47As/In 0.52Al 0.48As quantum wells on InP by spectroscopic ellipsometry and photoluminescence von Dinges, H.W., Hillmer, H., Burkhard, H., Lösch, R., Nickel, H., Schlapp, W.

Volltext

Determination of the refractive index of In0.53Al0.11Ga0.36As on InP in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

Volltext

Determination of ion beam etching damage on InP by spectroscopic ellipsometry von Dinges, H.W., Kempf, B., Burkhard, H., Göbel, R.

Volltext

Determination of refractive indexes of In0.52Al0.48As on InP in the wavelength range from 250 to 1900 nm by spectroscopic ellipsometry von DINGES, H. W, BURKHARD, H, LÖSCH, R, NICKEL, H, SCHLAPP, W

Volltext

An ellipsometric study of SiO2/Si3N4 double layers on silicon produced by chemical vapour deposition von Dinges, H.W.

Volltext

Optical properties of anodic oxide films on GaAs by ellipsometry von Dinges, H.W.

Volltext

Determination of the refractive indices and interfaces of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/ layers on InP in the wavelength range from 280 to 1900... von Dinges, H.W., Burkhard, H., Losch, R., Nickel, H., Schlapp, W.

Volltext bestellen