Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC von Haasmann, D., Dimitrijev, S.

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Memristor pattern recogniser: isolated speech word recognition von Maan, A.K, James, A.P, Dimitrijev, S

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Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiC von Jamet, P., Dimitrijev, S.

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Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation von Afanas’ev, V. V., Stesmans, A., Ciobanu, F., Pensl, G., Cheong, K. Y., Dimitrijev, S.

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Band alignment and defect states at SiC/oxide interfaces von Afanas’ev, V V, Ciobanu, F, Dimitrijev, S, Pensl, G, Stesmans, A

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Analysis of subthreshold carrier transport for ultimate DGMOSFET von Hak Kee Jung, Dimitrijev, S.

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Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC von Corrêa, S. A., Radtke, C., Soares, G. V., Miotti, L., Baumvol, I. J. R., Dimitrijev, S., Han, J., Hold, L., Kong, F., Stedile, F. C.

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Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal-Oxide-Semiconductor Capacitors von Kong, F.C.J., Dimitrijev, S., Jisheng Han

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Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides von Arora, R., Rozen, J., Fleetwood, D.M., Galloway, K.F., Zhang, C.X., Jisheng Han, Dimitrijev, S., Kong, F., Feldman, L.C., Pantelides, S.T., Schrimpf, R.D.

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Passivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO2 Interface Using Sodium Enhanced Oxidation von Sveinbjörnsson, E.Ö., Haasmann, Daniel, Dimitrijev, Sima, Vidarsson, Arnar Mar

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The SiC-SiO2 Interface: A Unique Advantage of SiC as a Wide Energy-Gap Material von Dimitrijev, Sima

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Effects of electrical stressing in power VDMOSFETs von Stojadinovic, N., Manic, I., Davidovic, V., Dankovic, D., Djoric-Veljkovic, S., Golubovic, S., Dimitrijev, S.

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Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures von Vidarsson, A.M., Sveinbjörnsson, E.Ö., Haasmann, Daniel, Dimitrijev, Sima, Nicholls, J.R.

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Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures von Radtke, Cláudio, Soares, Gabriel V., Dimitrijev, Sima, Miotti, Leonardo, Kong, Fred, Baumvol, Israel J.R., Hold, Leonie, Stedile, Fernanda Chiarello, Corrêa, Silma Alberton, Han, Ji Sheng

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Investigation of ultralow leakage in MOS capacitors on 4H SiC von Kuan Yew Cheong, Dimitrijev, S., Jisheng Han

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Effects of nitridation in gate oxides grown on 4H-SiC von Jamet, Philippe, Dimitrijev, Sima, Tanner, Philip

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Investigation of electron-hole generation in MOS capacitors on 4H SiC von Kuan Yew Cheong, Dimitrijev, S., Jisheng Han

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MOS capacitor on 4H-SiC as a nonvolatile memory element von Kuan Yew Cheong, Dimitrijev, S.

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Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs von Stojadinovic, N., Manic, I., Djoric-Veljkovic, S., Davidovic, V., Golubovic, S., Dimitrijev, S.

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Traps at the Interface of 3C-SiC/SiO2-MOS-Structures von Dimitrijev, Sima, Wagner, Günter, Ciobanu, Florin, Schöner, Adolf, Nagasawa, Hiroyuki, Cheong, K.Y., Afanas'ev, Valeri V., Pensl, Gerhard

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