Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors von Tsormpatzoglou, A., Hastas, N. A., Choi, N., Mahmoudabadi, F., Hatalis, M. K., Dimitriadis, C. A.

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Improved analysis and modeling of low-frequency noise in nanoscale MOSFETs von Ioannidis, E.G., Dimitriadis, C.A., Haendler, S., Bianchi, R.A., Jomaah, J., Ghibaudo, G.

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Analytical model for the injection recombination current in quantum well micro-light emitting diodes von Tsormpatzoglou, A., Oproglidis, T. A., Pappas, I., Dimitriadis, C. A.

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A compact drain current model of short-channel cylindrical gate-all-around MOSFETs von Tsormpatzoglou, A, Tassis, D H, Dimitriadis, C A, Ghibaudo, G, Pananakakis, G, Clerc, R

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Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5 μm down to 20 nm von Ioannidis, E.G., Haendler, S., Theodorou, C.G., Lasserre, S., Dimitriadis, C.A., Ghibaudo, G.

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Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack von Tsormpatzoglou, A, Tassis, D H, Dimitriadis, C A, Mouis, M, Ghibaudo, G, Collaert, N

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Origin of the low-frequency noise in n-channel FinFETs von Theodorou, C.G., Fasarakis, N., Hoffman, T., Chiarella, T., Ghibaudo, G., Dimitriadis, C.A.

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Analytical unified threshold voltage model of short-channel FinFETs and implementation von Fasarakis, N., Tsormpatzoglou, A., Tassis, D.H., Dimitriadis, C.A., Papathanasiou, K., Jomaah, J., Ghibaudo, G.

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Upgrade of Drain Current Compact Model for Nanoscale Triple-Gate Junctionless Transistors to Continuous and Symmetric von Oproglidis, T. A., Tsormpatzoglou, A., Theodorou, C. G., Karatsori, T. A., Ghibaudo, G., Dimitriadis, C. A.

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Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs von Tsormpatzoglou, A., Tassis, D.H., Dimitriadis, C.A., Ghibaudo, G., Collaert, N., Pananakakis, G.

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Symmetrical unified compact model of short-channel double-gate MOSFETs von Papathanasiou, K., Theodorou, C.G., Tsormpatzoglou, A., Tassis, D.H., Dimitriadis, C.A., Bucher, M., Ghibaudo, G.

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Stability of Amorphous-Silicon and Nanocrystalline Silicon Thin-Film Transistors Under DC and AC Stress von Hatzopoulos, A.T., Arpatzanis, N.., Tassis, D.H., Dimitriadis, C.A., Templier, F.., Oudwan, M.., Kamarinos, G..

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Experimental characterization of the subthreshold leakage current in triple-gate FinFETs von Tsormpatzoglou, A., Dimitriadis, C.A., Mouis, M., Ghibaudo, G., Collaert, N.

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Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy von VOUROUTZIS, N, ZORBA, T. T, DIMITRIADIS, C. A, PARASKEVOPOULOS, K. M, DOZSA, L, MOLNAR, G

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Analytical threshold voltage model for short-channel asymmetrical dual-gate material double-gate MOSFETs von Tsormpatzoglou, A., Pappas, I., Tassis, D.H., Dimitriadis, C.A., Ghibaudo, G.

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Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices von Pappas, I., Ghibaudo, G., Dimitriadis, C.A., Fenouillet-Béranger, C.

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Effect of Channel Width Shortening on the Stability of a-Si:H/nc-Si:H Bilayer Thin-Film Transistors von Pappas, I., Dimitriadis, C.A., Siskos, S., Templier, F., Oudwan, M., Kamarinos, G.

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Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs von Karatsori, T.A, Theodorou, C.G, Dimitriadis, C.A, Ghibaudo, G

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Source/drain optimization of underlapped lightly doped nanoscale double-gate MOSFETs von Tassis, D.H., Tsormpatzoglou, A., Dimitriadis, C.A., Ghibaudo, G., Pananakakis, G., Collaert, N.

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Raman scattering and photoluminescence of nitrogenated amorphous carbon films von Papadimitriou, D., Roupakas, G., Dimitriadis, C. A., Logothetidis, S.

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