High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy von Xenogiannopoulou, E, Tsipas, P, Aretouli, K E, Tsoutsou, D, Giamini, S A, Bazioti, C, Dimitrakopulos, G P, Komninou, Ph, Brems, S, Huyghebaert, C, Radu, I P, Dimoulas, A

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Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy von Bazioti, C., Papadomanolaki, E., Kehagias, Th, Walther, T., Smalc-Koziorowska, J., Pavlidou, E., Komninou, Ph, Karakostas, Th, Iliopoulos, E., Dimitrakopulos, G. P.

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Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content von Vasileiadis, I. G., Lymperakis, L., Adikimenakis, A., Gkotinakos, A., Devulapalli, V., Liebscher, C. H., Androulidaki, M., Hübner, R., Karakostas, Th, Georgakilas, A., Komninou, Ph, Dimakis, E., Dimitrakopulos, G. P.

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Optical Encoding by Plasmon-Based Patterning: Hard and Inorganic Materials Become Photosensitive von Siozios, A, Koutsogeorgis, D. C, Lidorikis, E, Dimitrakopulos, G. P, Kehagias, Th, Zoubos, H, Komninou, Ph, Cranton, W. M, Kosmidis, C, Patsalas, P

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Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires von Kehagias, Th, Dimitrakopulos, G P, Becker, P, Kioseoglou, J, Furtmayr, F, Koukoula, T, Häusler, I, Chernikov, A, Chatterjee, S, Karakostas, Th, Solowan, H-M, Schwarz, U T, Eickhoff, M, Komninou, Ph

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates von Dimitrakopulos, G.P., Bazioti, C., Grym, J., Gladkov, P., Hulicius, E., Pangrác, J., Pacherová, O., Komninou, Ph

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Incineration of tannery sludge under oxic and anoxic conditions: Study of chromium speciation von Kavouras, P., Pantazopoulou, E., Varitis, S., Vourlias, G., Chrissafis, K., Dimitrakopulos, G.P., Mitrakas, M., Zouboulis, A.I., Karakostas, Th, Xenidis, A.

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Structural anisotropic properties of a -plane GaN epilayers grown on r -plane sapphire by molecular beam epitaxy von Lotsari, A., Kehagias, Th, Tsiakatouras, G., Tsagaraki, K., Katsikini, M., Arvanitidis, J., Christofilos, D., Ves, S., Komninou, Ph, Georgakilas, A., Dimitrakopulos, G. P.

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Dislocation core investigation by geometric phase analysis and the dislocation density tensor von Kioseoglou, J, Dimitrakopulos, G P, Komninou, Ph, Karakostas, Th, Aifantis, E C

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Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates von Kehagias, Th, Dimitrakopulos, G. P., Ajagunna, A. O., Koukoula, T., Tsagaraki, K., Adikimenakis, A., Komninou, Ph, Georgakilas, A.

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Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures von Bazioti, C., Papadomanolaki, E., Kehagias, Th, Androulidaki, M., Dimitrakopulos, G. P., Iliopoulos, E.

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Morphology and origin of V-defects in semipolar (11–22) InGaN von Lotsari, A., Das, A., Kehagias, Th, Kotsar, Y., Monroy, E., Karakostas, Th, Gladkov, P., Komninou, Ph, Dimitrakopulos, G.P.

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Recombination of Shockley partial dislocations by electron beam irradiation in wurtzite GaN von Belabbas, I., Vasileiadis, I. G., Moneta, J., Smalc-Koziorowska, J., Dimitrakopulos, G. P.

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Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE von Lotsari, A., Dimitrakopulos, G.P., Kehagias, Th, Das, A., Monroy, E., Komninou, Ph

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Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots von Das, A., Sinha, P., Kotsar, Y., Kandaswamy, P.K., Dimitrakopulos, G.P., Kehagias, Th, Komninou, Ph, Nataf, G., De Mierry, P., Monroy, E.

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The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers von Smalc-Koziorοwska, J., Moneta, J., Chatzopoulou, P., Vasileiadis, I. G., Bazioti, C., Prytz, Ø., Belabbas, I., Komninou, Ph, Dimitrakopulos, G. P.

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First-principles investigation of a-line Shockley partial dislocations in wurtzite GaN: core reconstruction and electronic structure von Belabbas, I, Dimitrakopulos, G P, Kioseoglou, J, Chen, J, Smalc-Koziorοwska, J

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Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures von Smalc-Koziorowska, J., Bazioti, C., Albrecht, M., Dimitrakopulos, G. P.

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Structural characterization of ZnO nanopillars grown by atmospheric-pressure metalorganic chemical vapor deposition on vicinal 4H-SiC and SiO2/Si substrates von Tsiaoussis, I., Khranovskyy, V., Dimitrakopulos, G. P., Stoemenos, J., Yakimova, R., Pecz, B.

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Structure and interfacial properties of semipolar s-plane (1-101) InN grown on r-plane sapphire von Dimitrakopulos, G. P., Lotsari, A., Kehagias, Th, Ajagunna, A., Georgakilas, A., Karakostas, Th, Komninou, Ph

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