Incineration of tannery sludge under oxic and anoxic conditions: Study of chromium speciation von Kavouras, P., Pantazopoulou, E., Varitis, S., Vourlias, G., Chrissafis, K., Dimitrakopulos, G.P., Mitrakas, M., Zouboulis, A.I., Karakostas, Th, Xenidis, A.

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High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy von Xenogiannopoulou, E, Tsipas, P, Aretouli, K E, Tsoutsou, D, Giamini, S A, Bazioti, C, Dimitrakopulos, G P, Komninou, Ph, Brems, S, Huyghebaert, C, Radu, I P, Dimoulas, A

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Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy von Bazioti, C., Papadomanolaki, E., Kehagias, Th, Walther, T., Smalc-Koziorowska, J., Pavlidou, E., Komninou, Ph, Karakostas, Th, Iliopoulos, E., Dimitrakopulos, G. P.

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Recombination of Shockley partial dislocations by electron beam irradiation in wurtzite GaN von Belabbas, I., Vasileiadis, I. G., Moneta, J., Smalc-Koziorowska, J., Dimitrakopulos, G. P.

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Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content von Vasileiadis, I. G., Lymperakis, L., Adikimenakis, A., Gkotinakos, A., Devulapalli, V., Liebscher, C. H., Androulidaki, M., Hübner, R., Karakostas, Th, Georgakilas, A., Komninou, Ph, Dimakis, E., Dimitrakopulos, G. P.

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The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers von Smalc-Koziorοwska, J., Moneta, J., Chatzopoulou, P., Vasileiadis, I. G., Bazioti, C., Prytz, Ø., Belabbas, I., Komninou, Ph, Dimitrakopulos, G. P.

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First-principles investigation of a-line Shockley partial dislocations in wurtzite GaN: core reconstruction and electronic structure von Belabbas, I, Dimitrakopulos, G P, Kioseoglou, J, Chen, J, Smalc-Koziorοwska, J

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Optical Encoding by Plasmon-Based Patterning: Hard and Inorganic Materials Become Photosensitive von Siozios, A, Koutsogeorgis, D. C, Lidorikis, E, Dimitrakopulos, G. P, Kehagias, Th, Zoubos, H, Komninou, Ph, Cranton, W. M, Kosmidis, C, Patsalas, P

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Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires von Kehagias, Th, Dimitrakopulos, G P, Becker, P, Kioseoglou, J, Furtmayr, F, Koukoula, T, Häusler, I, Chernikov, A, Chatterjee, S, Karakostas, Th, Solowan, H-M, Schwarz, U T, Eickhoff, M, Komninou, Ph

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Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures von Smalc-Koziorowska, J., Bazioti, C., Albrecht, M., Dimitrakopulos, G. P.

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Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties von Papadomanolaki, E., Bazioti, C., Kazazis, S.A., Androulidaki, M., Dimitrakopulos, G.P., Iliopoulos, E.

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Photoluminescence enhancement of ZnO via coupling with surface plasmons on Al thin films von Dellis, S., Kalfagiannis, N., Kassavetis, S., Bazioti, C., Dimitrakopulos, G. P., Koutsogeorgis, D. C., Patsalas, P.

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates von Dimitrakopulos, G.P., Bazioti, C., Grym, J., Gladkov, P., Hulicius, E., Pangrác, J., Pacherová, O., Komninou, Ph

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On the applicability of elastic model to very thin crystalline layers von Jurczak, G, Maździarz, M, Dłużewski, P, Dimitrakopulos, G P, Komninou, Ph, Karakostas, T

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Compositional and strain analysis of In(Ga)N/GaN short period superlattices von Dimitrakopulos, G. P., Vasileiadis, I. G., Bazioti, C., Smalc-Koziorowska, J., Kret, S., Dimakis, E., Florini, N., Kehagias, Th, Suski, T., Karakostas, Th, Moustakas, T. D., Komninou, Ph

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Structural anisotropic properties of a -plane GaN epilayers grown on r -plane sapphire by molecular beam epitaxy von Lotsari, A., Kehagias, Th, Tsiakatouras, G., Tsagaraki, K., Katsikini, M., Arvanitidis, J., Christofilos, D., Ves, S., Komninou, Ph, Georgakilas, A., Dimitrakopulos, G. P.

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The Critical Temperature of Superconducting Aluminum Films von Arutyunov, K. Yu, Sedov, E. A., Zavialov, V. V., Stavrinidis, A., Stavrinidis, G., Chatzopoulos, Z., Adikimenakis, A., Konstantinidis, G., Florini, N., Chatzopoulou, P., Kehagias, T., Dimitrakopulos, G. P., Komninou, P.

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Dislocation core investigation by geometric phase analysis and the dislocation density tensor von Kioseoglou, J, Dimitrakopulos, G P, Komninou, Ph, Karakostas, Th, Aifantis, E C

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Morphology and origin of V-defects in semipolar (11–22) InGaN von Lotsari, A., Das, A., Kehagias, Th, Kotsar, Y., Monroy, E., Karakostas, Th, Gladkov, P., Komninou, Ph, Dimitrakopulos, G.P.

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Growth mechanism and microstructure of low defect density InN (0001) In-face thin films on Si (111) substrates von Kehagias, Th, Dimitrakopulos, G. P., Ajagunna, A. O., Koukoula, T., Tsagaraki, K., Adikimenakis, A., Komninou, Ph, Georgakilas, A.

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