Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands von Uchino, T., Bourdakos, K. N., de Groot, C. H., Ashburn, P., Kiziroglou, M. E., Dilliway, G. D., Smith, D. C.

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Effect of fluorine implantation dose on boron thermal diffusion in silicon von El Mubarek, H. A. W., Bonar, J. M, Dilliway, G. D., Ashburn, P., Karunaratne, M., Willoughby, A. F., Wang, Y., Hemment, P. L. F., Price, R., Zhang, J., Ward, P.

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Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001) von LU XU, MCNALLY, P. J, DILLIWAY, G. D. M, COWERN, N. E. B, JEYNES, Chris, MENDOZA, Ernest, ASHBURN, Peter, BAGNALL, Darren M

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Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si1-xGex von EL MUBAREK, H. A. W, KARUNARATNE, M, BONAR, J. M, DILLIWAY, G. D, WANG, Y, HEMMENT, P. L. F, WILLOUGHBY, A. F, ASHBURN, P

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Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition von DILLIWAY, G. D. M, BAGNALL, D. M, COWERN, N. E. B, JEYNES, C

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Stress characterization of device layers and the underlying Si1-xGex virtual substrate with high-resolution micro-Raman spectroscopy von CHEN, W. M, MCNALLY, P. J, DILLIWAY, G. D. M, BONAR, J, TUOMI, T, WILLOUGHBY, A. F. W

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Characterization of morphology and defects in silicon-germanium virtual substrates von Dilliway, G D, M, Willoughby, A F, W, Bonar, J M

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In Situ Phosphorus Doping of Germanium by APCVD von Dilliway, Gabriela, Van Den Boom, Ruud, Moussa, Alain, Leys, Frederik, Van Daele, Benny, Parmentier, Brigitte, Clarysse, Trudo, Simoen, Eddy R., Defranoux, C., Meuris, Marc M., Benedetti, Alessandro, Richard, Olivier, Bender, Hugo

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Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si/sub 1-x/Ge/sub x von Mubarek, H.A.W.E., Karunaratne, M., Bonar, J.M., Dilliway, G.D., Wang, Y., Hemment, P.L.F., Willoughby, A.F., Ashburn, P.

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Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si sub(1-x)Ge sub(x) von Mubarek, HAWE, Karunaratne, M, Bonar, J M, Dilliway, G D, Wang, Y, Hemment, PLF, Willoughby, A F, Ashburn, P

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Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition von Dilliway, G D M, Bagnall, D M, Cowern, N E B, Jeynes, C

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Stress characterization of device layers and the underlying Si[1[-[xGe[x virtual substrate with high-resolution micro-Raman spectroscopy von Chen, W M, McNally, P J, Dilliway, G D M, Bonar, J, Tuomi, T, Willoughby, A F W

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Catalyst free low temperature direct growth of carbon nanotubes von Uchino, T., Bourdakos, K.N., de Groot, C.H., Ashburn, P., Wang, S., Kiziroglou, M.E., Dilliway, G.D., Smith, D.C.

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Strain effects on transient enhanced diffusion and deactivation of arsenic implanted in silicon von DILLIWAY, G. D. M, SMITH, A. J, HAMILTON, J. J, XU, L, MCNALLY, P. J, COOKE, G, KHEYRANDISH, H, COWERN, N. E. B

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An overview of methods of fine and ultrafine particle collection for physicochemical characterisation and toxicity assessments von Kumar, P, Kalaiarasan, G, Porter, AE, Pinna, A, Kłosowski, MM, Demokritou, P, Chung, KF, Pain, C, Arvind, DK, Arcucci, R, Adcock, IM, Dilliway, C

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Working at the interface of physics and biology: An early career researcher perspective von Dilliway, C, Dyer, O, Mandrou, E, Mitchell, D, Menon, G, Sparks, H, Kapitany, V, Payne-Dwyer, A

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Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality von Leys, F.E., Bonzom, R., Kaczer, B., Janssens, T., Vandervorst, W., De Jaeger, B., Van Steenbergen, J., Martens, K., Hellin, D., Rip, J., Dilliway, G., Delabie, A., Zimmerman, P., Houssa, M., Theuwis, A., Loo, R., Meuris, M., Caymax, M., Heyns, M.M.

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On the use of total reflection x-ray topography for the observation of misfit dislocation strain at the surface of a Si/Ge–Si heterostructure von McNally, Patrick J., Dilliway, G., Bonar, J. M., Willoughby, A., Tuomi, T., Rantamäki, R., Danilewsky, A. N., Lowney, D.

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Observation of Misfit Dislocation Strain-Induced Surface Features for a Si/Ge-Si Heterostructure Using Total Reflection X-Ray Topography von McNally, P.J., Dilliway, G., Bonar, J.M., Willoughby, A., Tuomi, T., Rantamäki, R., Danilewsky, A.N., Lowney, D.

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