Total dose and displacement damage effects in a radiation-hardened CMOS APS von Bogaerts, J., Dierickx, B., Meynants, G., Uwaerts, D.

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A logarithmic response CMOS image sensor with on-chip calibration von Kavadias, S., Dierickx, B., Scheffer, D., Alaerts, A., Uwaerts, D., Bogaerts, J.

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Enhanced dark current generation in proton-irradiated CMOS active pixel sensors von Bogaerts, J., Dierickx, B., Mertens, R.

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Random telegraph signals in a radiation-hardened CMOS active pixel sensor von Bogaerts, J., Dierickx, B., Mertens, R.

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Space-variant nonorthogonal structure CMOS image sensor design von Pardo, F., Dierickx, B., Scheffer, D.

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Explaining the amplitude of RTS noise in submicrometer MOSFETs von Simoen, E., Dierickx, B., Claeys, C.L., Declerck, G.J.

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CMOS foveated image sensor: signal scaling and small geometry effects von Pardo, F., Dierickx, B., Scheffer, D.

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The decrease of random telegraph signal noise in metal-oxide-semiconductor field-effect transistors when cycled from inversion to accumulation von DIERICKX, B, SIMOEN, E

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Position-encoding smart pixel arrays von Dierickx, B.

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Hot-Carrier degradation of the Random Telegraph Signal amplitude in submicrometer Si MOSTs von Simoen, E., Dierickx, B., Claeys, C.

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Indirect X-ray photon-counting image sensor with 27T pixel and 15e−rms accurate threshold von Dierickx, B, Dupont, B, Defernez, A, Ahmed, N

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Random addressable 2048×2048 active pixel image sensor von Scheffer, D., Dierickx, B., Meynants, G.

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The behavior of silicon p-n junction-based devices at liquid helium temperatures von SIMOEN, E, DIERICKX, B, DEFERM, L, CLAEYS, C

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The mobility 1/f gamma noise spectrum derived from the amplitude fluctuations of lattice harmonic oscillators von Dierickx, B., Simeon, E.

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A 1006 element hybrid silicon pixel detector with strobed binary output von Anghinolfi, F., Aspell, P., Bass, K., Beusch, W., Bosisio, L., Boutonnet, C., Burger, P., Campbell, M., Chesi, E., Claeys, C., Clemens, J.C., Cohen Solal, M., Debusschere, I., Delpierre, P., Di Bari, D., Dierickx, B., Enz, C.C., Focardi, E., Forti, F., Gally, Y., Glaser, M., Gys, T., Habrard, M.C., Heijne, E.H.M., Hermans, L., Hurst, R., Inzani, P., Jaeger, J.J., Jarron, P., Krummenacher, F., Lemeilleur, F., Lenti, V., Manzari, V., Meddeler, G., Morando, M., Munns, A., Nava, F., Navach, F., Neyer, C., Ottaviani, G., Pellegrini, F., Pengg, F., Perego, R., Pindo, M., Potheau, R., Quercigh, E., Redaelli, N., Rossi, L., Sauvage, D., Segato, G., Simone, S., Stefanini, G., Tonelli, G., Vanstraelen, G., Vegni, G., Verweij, H., Viertel, G.M., Waisbard, J.

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Kink-related low-frequency noise overshoot in Si NMOSTs at liquid helium temperatures von Simoen, E., Dierickx, B.

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A study of the kink-related excess low-frequency noise in silicon-on-insulator n-metal-oxide-semiconductor transistors operated at liquid helium temperatures von SIMOEN, E, DIERICKX, B, CLAEYS, C

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The charge transport in a silicon resistor at liquid-helium temperatures von SIMOEN, E, DIERICKX, B, DEFERM, L, CLAEYS, C, DECLERCK, G

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Freeze-out effects on NMOS transistor characteristics at 4.2 K von Simoen, E., Dierickx, B., Warmerdam, L., Vermeiren, J., Claeys, C.

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Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K von Dierickx, B., Warmerdam, L., Simoen, E.R., Vermeiren, J., Claeys, C.

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