On the role of defect charge state in the stability of point defects in silicon von Kimerling, L.C., DeAngelis, H.M., Diebold, J.W.

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Quantification of Shallow-junction Dopant Loss during CMOS Process von Buh, G.H., Park, T., Jee, Y., Hong, S.J., Ryoo, C., Yoo, J., Lee, J.W., Yon, G.H., Jun, C.S., Shin, Y.G., Chung, U.-In, Moon, J.T.

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The CDF central electromagnetic calorimeter von Balka, L., Coover, K., Diebold, R., Evans, W., Hill, N., Nodulman, L., Proudfoot, J., Rezmer, R., Sauer, J.R., Schoessow, P., Underwood, D., Wagner, R.G., Walschon, E., Wicklund, A.B., Kamon, T., Kikuchi, Y., Kondo, K., Takikawa, K., Yamashita, A., Elias, J.E., Jensen, H., Kautzky, H., Krull, R., Yasuoka, K., Devlin, T., Joshi, U., Bauer, D., Connor, D., Cooper, J.W., Hahn, S.R., Miller, M., VanBerg, R., Williams, H.H., Kobayashi, S., Murakami, A., Mikamo, S.

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