Effect of gate-source access region stress on current collapse in AlGaN/GaN HFETs von DiSanto, D.W., Bolognesi, C.R.

Volltext

At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity von DiSanto, D.W., Bolognesi, C.R.

Volltext

Gate-to-drain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs von DiSanto, D.W., Kwan, A.C., Bolognesi, C.R.

Volltext

InP/GaAsSb/InP DHBTs with f T = 300 GHz and high maximum oscillation frequencies: the effect of scaling on device performance von Liu, H. G., DiSanto, D.W., Watkins, S. P., Bolognesi, C. R.

Volltext

High-speed AlGaN/GaN HFETs fabricated by wet etchingmesa isolation von Maher, H., DiSanto, D.W., Dvorak, M.W., Soerensen, G., Bolognesi, C.R., Bardwell, J.A., Tang, H., Webb, J.B.

Volltext

High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation von Maher, H, DiSanto, D W, Dvorak, M W, Soerensen, G, Bolognesi, C R, Bardwell, J A, Tang, H, Webb, J B

Volltext

Transistor delay analysis and effective channel velocity extraction in AlGaN/GaN HFETs von Bolognesi, C.R., Kwan, A.C., DiSanto, D.W.

Volltext bestellen