Ozone passivation of slow transient current collapse in AlGaN∕GaN field-effect transistors: The role of threading dislocations and the passivation mechanism von DiSanto, D. W., Sun, H. F., Bolognesi, C. R.

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At bias extraction of parasitic source and drain resistances in AlGaN/GaN HFETs: bias dependence and implications for device modelling and physics von DiSanto, D. W., Bolognesi, C. R.

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Effect of gate-source access region stress on current collapse in AIGaN/GaN HFETs von DISANTO, D. W, BOLOGNESI, C. R

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Gate-to-drain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs von DiSanto, D.W., Kwan, A.C., Bolognesi, C.R.

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Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors von Maher, H., DiSanto, D. W., Soerensen, G., Bolognesi, C. R., Tang, H., Webb, J. B.

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Performance comparison of Cu and Ni gates for deep submicrometer AlGaN/GaN HFETs von Sun, H. F., DiSanto, D. W., Bolognesi, C. R.

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High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation von Maher, H, DiSanto, D W, Dvorak, M W, Soerensen, G, Bolognesi, C R, Bardwell, J A, Tang, H, Webb, J B

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New fabrication techniques for PASS von Kotlicki, A., Turrell, B.G., DiSanto, D., Drukier, A.K.

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Effect of gate-source access region stress on current collapse in AlGaN/GaN HFETs von DiSanto, D.W., Bolognesi, C.R.

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Nucleation of the Supercooled Normal to Superconducting Phase Transition in Small Indium Spheres Induced by γ Radiation von Meagher, G., DiSanto, D., Kotlicki, A., Eska, G., Turrell, B. G.

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Effect of gate-source access region stress on current collapse in AlGaN/GaN HFETs von DiSanto, D W, Bolognesi, C R

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Ozone passivation of slow transient current collapse in AlGaN ∕ GaN field-effect transistors: The role of threading dislocationsand the passivation mechanism von DiSanto, D. W., Sun, H. F., Bolognesi, C. R.

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Alteration of Cardiac Function in Patients with Temporal Lobe Epilepsy: Different Roles of EEG‐ECG Monitoring and Spectral Analysis of RR Variability von Massetani, Roberto, Strata, Giancarlo, Galli, Renato, Gori, Sara, Gneri, Carlo, Limbruno, Ugo, Santo, Domenica, Mariani, Mario, Murri, Luigi

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Gate-to-drain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs von DiSanto, D W, Kwan, A C, Bolognesi, C R

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InP/GaAsSb/InP DHBTs with f T = 300 GHz and high maximum oscillation frequencies: the effect of scaling on device performance von Liu, H. G., DiSanto, D.W., Watkins, S. P., Bolognesi, C. R.

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Transistor delay analysis and effective channel velocity extraction in AlGaN/GaN HFETs von Bolognesi, C.R., Kwan, A.C., DiSanto, D.W.

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High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation von Maher, H, DiSanto, D W, Dvorak, M W, Soerensen, G, Bolognesi, C R, Bardwell, J A, Tang, H, Webb, J B

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Methods for preventing and treating peripheral neuropathy by administering desmethylselegiline delivery compositions von BLUME CHERYL D.,DISANTO ANTHONY R

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Salivary Pseudomonas aeruginosa von Topping, John W., Popkes, Donald L., DiSanto, Donato A.

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Serum Neurofilament light: A biomarker of neuronal damage in multiple sclerosis von Disanto, Giulio, Barro, Christian, Benkert, Pascal, Naegelin, Yvonne, Schädelin, Sabine, Giardiello, Antonella, Zecca, Chiara, Blennow, Kaj, Zetterberg, Henrik, Leppert, David, Kappos, Ludwig, Gobbi, Claudio, Kuhle, Jens, Kuhle, Jens, Lorscheider, Johannes, Yaldizli, Özgür, Derfuss, Tobias, Kappos, Ludwig, Disanto, Giulio, Zecca, Chiara, Gobbi, Claudio, Benkert, Pascal, Achtnichts, Lutz, Nedeltchev, Krassen, Kamm, Christian P, Salmen, Anke, Chan, Andrew, Lalive, Patrice H, Pot, Caroline, Schluep, Myriam, Granziera, Cristina, Du Pasquier, Renaud, Müller, Stefanie, Vehoff, Jochen

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