Applications of MBE grown PHEMTs von DiLorenzo, J.V., Lauterwasser, B., Zaitlin, M.P.

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Nonalloyed and In Situ Ohmic Contacts to Highly Doped n-Type GaAs Layers Grown by Molecular Beam Epitaxy (MBE) for Field-Effect Transistors von DiLorenzo, J V, Niehaus, W C, Cho, A Y

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Low-noise and high-power GaAs microwave field-effect transistors prepared by molecular beam epitaxy von Cho, A. Y., DiLorenzo, J. V., Hewitt, B. S., Niehaus, W. C., Schlosser, W. O., Radice, C.

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".....and their spears into pruning hooks." [MMIC products] von DiLorenzo, J.V.

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Observation of Polaritons in GaAs: A New Interpretation of the Free-Exciton Reflectance and Luminescence von Sell, D. D., Dingle, R., Stokowski, S. E., DiLorenzo, J. V.

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Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers von Dilorenzo, J.V.

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Control of gate-Drain avalanche in GaAs MESFET's von Wemple, S.H., Niehaus, W.C., Cox, H.M., DiLorenzo, J.V., Schlosser, W.O.

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GaAs Power MESFET's: Design, Fabrication, and Performance von Dilorenzo, J.V., Wisseman, W.R.

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Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions von Wemple, S.H., Niehous, W.C., Fukui, H., Irvin, J.C., Cox, H.M., Hwang, J.C.M., DiLorenzo, J.V., Schlosser, W.O.

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WA-B5 nonalloyed and "In situ" ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors von DiLorenzo, J.V., Niehaus, W.C., Cho, A.Y.

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Reliability of power GaAs field-effect transistors von Fukui, H., Wemple, S.H., Irvin, J.C., Niehaus, W.C., Hwang, J.C.M., Cox, H.M., Schlosser, W.O., DiLorenzo, J.V.

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Improved performance of GaAs microwave field-effect transistors with low inductance via-connections through the substrate von D'Asaro, L.A., DiLorenzo, J.V., Fukui, H.

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Growth of Epitaxial GaAs Structures for High Efficiency IMPATT's von Luther, L. C., DiLorenzo, J. V.

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Optimization of low-noise GaAs MESFET's von Fukui, H., DiLorenzo, J.V., Hewitt, B.S., Velebir, J.R., Cox, H.M., Luther, L.C., Seman, J.A.

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Electrolytic etching and electron mobility of GaAs for FET's von Rode, D.L., Schwartz, B., DiLorenzo, J.V.

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Selective lift-off for preferential growth with molecular beam epitaxy von Cho, A.Y., DiLorenzo, J.V., Mahoney, G.E.

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Orientation Effects on the Electrical Properties of High Purity Epitaxial GaAs von DiLorenzo, J. V., Machala, A. E.

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Analysis of Impurity Distribution in Homoepitaxial n on n + Films of GaAs which Contain High-Resistivity Regions von DiLorenzo, J. V., Marcus, R. B., Lewis, R.

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CW performance of vapor-grown GaAs transferred electron oscillators von Di Lorenzo, J.V.

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Applications of MBE grown PHEMTs von DILORENZO, J. V, LAUTERWASSER, B, ZAITLIN, M. P

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