Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography von Munshi, A. M, Dheeraj, D. L, Fauske, V. T, Kim, D. C, Huh, J, Reinertsen, J. F, Ahtapodov, L, Lee, K. D, Heidari, B, van Helvoort, A. T. J, Fimland, B. O, Weman, H

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Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy von Dheeraj, D L, Munshi, A M, Scheffler, M, van Helvoort, A T J, Weman, H, Fimland, B O

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Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111) von Largeau, L, Dheeraj, D L, Tchernycheva, M, Cirlin, G E, Harmand, J C

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Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy von Sartel, C., Dheeraj, D.L., Jabeen, F., Harmand, J.C.

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Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress von Signorello, G., Lörtscher, E., Khomyakov, P.A., Karg, S., Dheeraj, D.L., Gotsmann, B., Weman, H., Riel, H.

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The effects of Sb concentration variation on the optical properties of GaAsSb GaAs heterostructured nanowires von Todorovic, J, Kauko, H, Ahtapodov, L, Moses, A F, Olk, P, Dheeraj, D L, Fimland, B O, Weman, H, van Helvoort, A T J

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Zinc blende GaAsSb nanowires grown by molecular beam epitaxy von Dheeraj, D L, Patriarche, G, Largeau, L, Zhou, H L, van Helvoort, A T J, Glas, F, Harmand, J C, Fimland, B O, Weman, H

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In situ electronic probing of semiconducting nanowires in an electron microscope von FAUSKE, V.T., ERLBECK, M.B., HUH, J., KIM, D.C., MUNSHI, A.M., DHEERAJ, D.L., WEMAN, H., FIMLAND, B.O., VAN HELVOORT, A.T.J.

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Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy von Dheeraj, D.L., Munshi, A.M., Christoffersen, O.M., Kim, D.C., Signorello, G., Riel, H., van Helvoort, A.T.J., Weman, H., Fimland, B.O.

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Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires von Dheeraj, D.L., Patriarche, G., Zhou, H., Harmand, J.C., Weman, H., Fimland, B.O.

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Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires von Hoang, Thang B., Moses, A. F., Zhou, H. L., Dheeraj, D. L., Fimland, B. O., Weman, H.

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Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires von Ahtapodov, L, Munshi, A M, Nilsen, J S, Reinertsen, J F, Dheeraj, D L, Fimland, B O, van Helvoort, A T J, Weman, H

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Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy von Zhou, H L, Hoang, T B, Dheeraj, D L, van Helvoort, A T J, Liu, L, Harmand, J C, Fimland, B O, Weman, H

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Semiconductor quantum-wires and nano-wires for optoelectronic applications von Weman, H., Palmgren, S., Karlsson, K. F., Rudra, A., Kapon, E., Dheeraj, D. L., Fimland, B. O., Harmand, J. C.

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Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires von Todorovic, J, Moses, A F, Karlberg, T, Olk, P, Dheeraj, D L, Fimland, B O, Weman, H, van Helvoort, A T J

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Radial composition variations in the shells of GaAs AlGaAs core-shell nanowires von Nilsen, J S, Reinertsen, J F, Mosberg, A, Fauske, V T, Munshi, A M, Dheeraj, D L, Fimland, B O, Weman, H, van Helvoort, A T J

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In-situ electrical and structural characterization of individual GaAs nanowires von Fauske, V T, Kim, D C, Munshi, A M, Dheeraj, D L, Fimland, B-O, Weman, H, van Helvoort, A T J

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The electrodeposition of copper onto UHV-prepared GaAs(0 0 1) surfaces von Gründer, Y., Renner, F.U., Lee, T.-L., Dheeraj, D.L., Fimland, B.O., Zegenhagen, J.

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Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111) von Munshi, Abdul Mazid, Dheeraj, Dasa L., Todorovic, Jelena, van Helvoort, Antonius T.J., Weman, Helge, Fimland, Bjørn-Ove

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Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases von Moses, A. F., Hoang, T. B., Ahtapodov, L., Dheeraj, D. L., Fimland, B. O., Weman, H., Helvoort, A. T. J. van

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