Flash photolysis studies of the reaction of NH2 radicals with NO von Lesclaux, R., Khê, Pham Van, Dezauzier, P., Soulignac, J.C.

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Le corps de l’enfant aux prises avec le cancer von Mallet, J., Martin-Mattera, P., Levy, A., Peretti, P., Roquand, M.-A., Dézauzier, C.

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2-NSEC pulses from double cavity dye laser von Eranian, A., Dezauzier, P., de Witt, O.

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Analysis of transport properties of β-SiC films: determination of donor density and compensation ratio von Contreras, S., Dezauzier, C., Thomas, P., Robert, J.L.

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Flash photolysis studies of the reaction of NH 2 radicals with NO von Lesclaux, R., Khê, Pham Van, Dezauzier, P., Soulignac, J.C.

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Electrical characterization of SiC for high-temperature thermal-sensor applications von Dezauzier, C., Becourt, N., Arnaud, G., Contreras, S., Ponthenier, J.L., Camassel, J., Robert, J.L., Pascual, J., Jaussaud, C.

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Dual Gate Oxide for 0.18μm Technologies and Below: Optimization of the Wet Processing Sequence von Guyader, F., Bernard, H., Petitdidier, Sébastien, Dezauzier, C., Pizzetti, C., Lévy, Didier

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Amplification competition in a double-cavity flash-pumped dye laser von Dezauzier, Pierre, Eranian, Armand, de Witte, Olivier

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Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating von Phan, Hoang-Phuong, Dinh, Toan, Kozeki, Takahiro, Qamar, Afzaal, Namazu, Takahiro, Dimitrijev, Sima, Nguyen, Nam-Trung, Dao, Dzung Viet

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Thermoresistive properties of p-type 3C–SiC nanoscale thin films for high-temperature MEMS thermal-based sensors von Dinh, Toan, Phan, Hoang-Phuong, Kozeki, Takahiro, Qamar, Afzaal, Namazu, Takahiro, Nguyen, Nam-Trung, Dao, Dzung Viet

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Thermoresistive Effect for Advanced Thermal Sensors: Fundamentals, Design Considerations, and Applications von Dinh, Toan, Hoang-Phuong Phan, Qamar, Afzaal, Woodfield, Peter, Nam-Trung Nguyen, Dao, Dzung Viet

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Observation of local vibrational modes in N-doped 6H-SiC von Patankar, M. K., Parida, Santanu, Chandra, Sharat, Srihari, V., Kasinathan, M., Behera, R. P., Jayanthi, T., Dhara, Sandip

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Silicon carbide and silicon carbide-based structures: The physics of epitaxy von Masri, Pierre

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Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching von Rittenhouse, Tilghman L, Bohn, Paul W, Adesida, Ilesanmi

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Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide von Rittenhouse, Tilghman L., Bohn, Paul W., Hossain, Tim K., Adesida, Ilesanmi, Lindesay, James, Marcus, Alfred

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High temperature electronics using SiC: actual situation and unsolved problems von Chelnokov, V.E., Syrkin, A.L.

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Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy von Savkina, N.S., Lebedev, A.A., Davydov, D.V., Strel'chuk, A.M., Tregubova, A.S., Raynaud, C., Chante, J.-P., Locatelli, M.-L., Planson, D., Milan, J., Godignon, P., Campos, F.J., Mestres, N., Pascual, J., Brezeanu, G., Badila, M.

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Continuity conditions at heterointerfaces and optimization conditions of buffer layers in SiC/Si von Masri, P.

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The formation of 3C-SiC in crystalline Si by carbon implantation at 950°C and annealing — a structural study von Frangis, N., Stoemenos, J., Landuyt, J. Van, Nejim, A., Hemment, P.L.F.

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High temperature carbon implantation in SIMOX von Nejim, A., Hemment, P.L., Stoemenos, J.

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