Stoichiometry-dependent deep levels in n-type GaAs von NISHIZAWA, J.-I, OYAMA, Y, DEZAKI, K

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Deep levels in Te-doped GaAs prepared by annealing under controlled arsenic vapor pressure von OYAMA, Y, NISHIZAWA, J.-I, DEZAKI, K

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Stoichiometry-dependent deep levels in p-GaAs prepared by annealing under excess arsenic vapor pressure von NISHIZAWA, J.-I, OYAMA, Y, DEZAKI, K

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Photocapacitance investigation of the ionized levels in n -GaAs crystals and its association with the ‘‘photoquenching phenomenon’’ von Nishizawa, Jun-ichi, Oyama, Yutaka, Dezaki, Kazushi

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Photocapacitance investigation of the two photoquenching levels in n -type GaAs crystals with excess arsenic atoms von Nishizawa, Jun-ichi, Oyama, Yutaka, Dezaki, Kazushi

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Formation energy of excess arsenic atoms in n-type GaAs von NISHIZAWA, J.-I, OYAMA, Y, DEZAKI, K

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Photocapacitance Measurement on Intentionally Undoped n-Type Ga 0.9 Al 0.1 As Grown by Stoichiometry Control Method von Nishizawa, Jun-ichi, Motozawa, Mitsutake, Oyama, Yutaka, Dezaki, Kazushi, Fujishiro, Hiroyuki, Suto, Ken

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Photocapacitance (PHCAP) investigation of proton irradiated Si-PIN diodes von NISHIZAWA, J.-I, OYAMA, Y, DEZAKI, K, SUZUKI, S

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Photocapacitance measurement on intentionally undoped n-type Ga0.9Al0.1As grown by stoichiometry control method von NISHIZAWA, J.-I, MOTOZAWA, M, OYAMA, Y, DEZAKI, K, FUJISHIRO, H, SUTO, K

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Automatic measurement system for photocapacitometry analysis von Nishizawa, Jun‐ichi, Koike, Masayoshi, Dezaki, Kazushi, Shibata, Jiro

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