Dielectric and infrared properties of TiO2 films containing anatase and rutile von Busani, T, Devine, R A B

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Non-volatile memory device based on mobile protons in SiO2 thin films von Vanheusden, K., Warren, W. L., Devine, R. A. B., Fleetwood, D. M., Schwank, J. R., Shaneyfelt, M. R., Winokur, P. S., Lemnios, Z. J.

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Bias stress voltage dependence for fast and slow traps resulting in negative bias temperature instability von Mee, J. K., Devine, R. A. B.

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Temperature-dependent current transport in low-k inorganic dielectrics von TRINGE, J. W, SOLOMON, J. S, DEVINE, R. A. B

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Ultraviolet radiation induced defect creation in buried SiO2 layers von DEVINE, R. A. B, LERAY, J.-L, MARGAIL, J

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Point defect generation during high temperature annealing of the Si-SiO2 interface von DEVINE, R. A. B, MATHIOT, D, WARREN, W. L, FLEETWOOD, D. M, ASPAR, B

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Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks von Devine, R. A. B, Busani, T., Quevedo-Lopez, Manuel, Alshareef, H. N.

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Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors von Mee, J.K., Devine, R.A.B., Trombetta, L., Kaplar, R.J., Gouker, P.

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Structural nature of the Si/SiO2 interface through infrared spectroscopy von Devine, R. A. B.

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Extraction of recoverable and permanent trapped charge resulting from negative bias temperature instability von Nguyen, D. D., Kouhestani, C., Kambour, K. E., Hjalmarson, H. P., Devine, R. A. B.

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Analysis of the vibrational mode spectra of amorphous SiO2 films von Martinet, C., Devine, R. A. B.

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Radiation Induced Structural Changes in Amorphous SiO 2 : I. Point Defects von R. A. B. Devine, R. A. B. Devine

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Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor von Chaneliere, C., Four, S., Autran, J. L., Devine, R. A. B., Sandler, N. P.

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Molecular volume dependence of the electronic and ionic polarizabilities in TiO2 and SiO2 von Devine, R. A. B., Busani, T.

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Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices von Hjalmarson, Harold P., Nguyen, Duc, Kambour, Kenneth, Kouhestani, Camron, Devine, Roderick A.B.

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Conduction mechanisms in Ta2O5/SiO2 and Ta2O5/Si3N4 stacked structures on Si von Chaneliere, C., Autran, J. L., Devine, R. A. B.

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Nondestructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5 von Devine, R. A. B.

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Electrical and physical properties of room temperature deposited, mixed TiO2∕SiO2 oxides von Busani, T., Devine, R. A. B., Yu, Xiangkun, Seo, Hye-Won

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Influence of ionizing radiation of predamaged, amorphous SiO2 von DEVINE, R. A. B, FIORI, C

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Defect reactivation and structural relaxation in deposited amorphous SiO2 von DEVINE, R. A. B

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